CNZ2152 PANASONIC | Alldatasheet

Document overview

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Technical content

Features

Fast response High sensitivity High SN ratio

Applications

Detection of paper, film and cloth Optical mark reading Detection of coin and bill Detection of position and edge Start, end mark detection of magnetic tape *1 Standard white paper (reflective ratio 90%) *2 Tracing paper (paper SM-1 for 2nd original paper) /,/,/,/, /,/,/, Unit : mm (10.0) (2.54) 4-ø0.45 ø0.9 +0.1–0.2 +0.1 –0.2 +0.1 –0.2 14.0 16.0–0.3 1.0 10.0–0.2 6.2–0.2 7.0 min. 1.0(typ.) ø2.2–0.2 Mark for indicating LED side ø1.5 3.5–0.2 3.2–0.2 8.0–0.2 Pin connection 14 32 /,/, 2 3 1 4 (Note) ( ) Dimension is reference /,/,/, /,/, /,/, /,/,/,/,/, R L IF IC V CC d = 5 mm Test paper Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Input (Light Reverse voltage (DC) V R 3V emitting diode)Forward current (DC) IF 100 mA Power dissipation PD *1 150 mW Collector to emitter voltageV CEO 20 V Output (PhotoEmitter to collector voltageV ECO 3V transistor) Collector current IC 30 mA Collector power dissipationPC *2 150 mW Temperature Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Input Forward voltage (DC) V F IF = 100mA 1.25 1.5 V characteristicsReverse current (DC) IR V R = 3V 10 µA Output characteristicsCollector cutoff current ICEO V CE = 10V 0.05 2 µA Collector current IC *1 V CC = 5V , IF = 20mA, RL = 100Ω 0.8 3 mA Transfer IC *2 500 µA characteristicsResponse time tr*3 , tf*4 V CC = 10V , IC = 1mA, RL = 100Ω 8 µs Collector to emitter saturation voltageV CE(sat) IF = 100mA, IC = 1mA 0.6 V *1 *2 Transfer characteristics measurement circuit (Ambient light is shut off completely) *3 Time required for the collector current to increase from 10% to 90% of its final value. *4 Time required for the collector current to decrease from 90% to 10% of its initial value. *1 Input power derating ratio is 2.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 2.0 mW/˚C at Ta ≥ 25˚C.

CNZ2152 Reflective Photosensors (Photo Reflectors) 120 100 Ambient temperature Ta (˚C ) 0 2 04 06 08 0 1 0 0 – 25 IF — V F 120 100 Forward voltage VF (V) Forward current IF (mA) Ta = 25˚C V F — Ta 1.6 1.2 0.8 0.4 Ambient temperature Ta (˚C ) Forward voltage VF (V) 0 2 04 06 08 0 1 0 0 – 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 IC — IF 10 2 10 –1 Forward current IF (mA) Collector current IC (mA) 11 0 1 0 2 10 –2 10 –1 V CC = 5V Ta = 25˚C R L = 100Ω (1) White paper (Reflective ratio 90%) (2) Tracing paper (Paper SM - 1 for 2nd original paper) IC — V CE Collector to emitter voltage VCE (V) Collector current IC (mA) 4 8 12 16 20 24 Ta = 25˚C Relative output current IC (%) IC — Ta 160 120 Ambient temperature Ta (˚C ) V CC = 5V IF = 20mA R L = 100Ω ICEO — Ta 10 3 10 2 10 –1 Ambient temperature Ta (˚C ) Dark current ICEO (µA) 10 –2 11 010 –1 tr — IC Collector current IC (mA) Rise time tr (µs) 10 –1 10 –2 10 3 10 2 V CC = 10V Ta = 25˚C IC — d Distance d (mm) Collector current IC (mA) 24 1 2 1086 V CC = 5V Ta = 25˚C I F = 20mA R L = 100Ω IF , IC — Ta Forward current, collector current IF , IC (mA) (1) (2) IF = 100mA 80mA 60mA 50mA 40mA 30mA 20mA 10mA V CE = 25V 10V R L = 1kΩ 100Ω White paper (Reflective ratio 90%) Mirror IF IC IF = 100mA 50mA d 10% 90% td tr tf R L V CC V 1 V 2 V 1 V 2 Sig. OUT 50Ω Sig.IN /,/,