ON1215 PANASONIC | Alldatasheet
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Highly precise position detection : 0.3 mm Large output current : IC = 2 mA (min.) High resolution Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Input (Light Reverse voltage (DC) V R 3V emitting diode)Forward current (DC) I F 25 mA Power dissipation P D *1 70 mW Collector current I C 30 mA Output (PhotoCollector to emitter voltageV CEO 20 V transistor) Emitter to collector voltageV ECO 5V Collector power dissipationPC *2 100 mW Temperature Operating ambient temperature Topr –25 to +80 ˚C Storage temperature T stg –30 to +100 ˚C Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Input Forward voltage (DC) V F IF = 20mA 2.1 2.8 V characteristicsReverse current (DC) I R V R = 3V 5 µA Output Collector cutoff current ICEO V CE = 10V 100 600 nA characteristicsCollector to emitter capacitanceC C V CE = 10V , f = 1MHz 5 pF Transfer Collector current I C V CE = 10V , IF = 5mA, RL = 300Ω 2m A characteristicsResponse time t r , tf* V CC = 10V , IC = 5mA, RL = 100Ω 100 µs Collector to emitter saturation voltageV CE(sat) IF = 10mA, IC = 1mA 0.7 1.5 V * Switching time measurement circuit Overview CNZ1215 is a photocoupler in which a visible light emitting diode is used as the light emitting element, and a high sensitivity Darlington phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. *1 Input power derating ratio is 0.93 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Note) The part number in the parenthesis shows conventional part number.
CNZ1215 Transmissive Photosensors (Photo Interrupters) Ambient temperature Ta (˚C ) 0 2 04 06 08 0 1 0 0 – 25 IF — V F Forward voltage VF (V) Forward current IF (mA) Ta = 25˚C IC — IF 10 2 10 –1 Forward current IF (mA) Collector current IC (mA) 11 0 1 0 2 10 –2 10 –1 V CE = 10V Ta = 25˚C V F — Ta 3.2 2.4 1.6 0.8 Ambient temperature Ta (˚C ) Forward voltage VF (V) 0 2 04 06 08 0 1 0 0 – 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 Rise time tr (µs) 11 010 –1 tr — IC Collector current IC (mA) 10 –2 10 4 10 3 10 2 V CC = 10V Ta = 25˚C IC — V CE Collector to emitter voltage VCE (V) Collector current IC (mA) 10 3 10 2 11 0 1 0 2 10 –1 10 –1 IF = 10mA Ta = 25˚C Relative output current IC (%) IC — Ta 160 120 Ambient temperature Ta (˚C ) V CE = 10V IF = 10mA ICEO — Ta 10 –2 10 –3 10 –1 Ambient temperature Ta (˚C ) V CE = 10V Dark current ICEO (µA) 10 –4 IC — d 100 Distance d (mm) Relative output current IC (%) 12 6 543 V CE = 10V IF = 5mA IF , IC — Ta Forward current, collector current IF , IC (mA) 0 2 04 06 08 0 1 0 0– 40 – 20 IF IC IF = 20mA 10mA 100Ω R L = 1kΩ 500Ω d 10% 90% td tr tf R L V CC V 1 V 2 V 1 V 2 Sig. OUT 50Ω Sig.IN /;/; Criterion
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