CNY51

CNY51 GESS | Alldatasheet

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G E SOLID STATE ou pe 3e7soa1 0019850 & § Optoelectronic Specifications T4HI-33 Photon Coupled Isolator CNY 51 ofgce GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor , ma —| at ‘The GE Solid State CNYSI consists of a gallium arsenide, infrared —| emitting diode coupled with esllicon phototransistorin a dual-inline T 4 One . package, This device is also available in Surface-Mount packaging. ¢ i} [ooo TSE poe FEATURES: ot Pata ge a ae « High isolation voltage, S000V minimum. He ea eae on SGE Solid State unique patented glass isolation fuk te 8 | don ice oie | 8 | construction o Fos 18. oe | 38] ° «¢ High efficiency liquid epitaxial IRED. T G28 70 OP | oe | 4 High humidity resistant silicone encapsulation. ra fp « Fast switching speeds. aries a Bin i = | em | = 376 absolute maximum ratings: (25°C) (unless otherwise specified) a | tag us| 8s seas INFRARED EMITTING DIODE __ cca ea TORSTALLED Position LEAD CENTERS. Power Dissipation — Ta = 25°C *100 milliwatts man | 2, OVERALL INSTALLED DIENSION. Forward Current (Continuous) 60 milliamps 2. THESE MEASUREMENTS ARE MADE FROM THE Forward Current (Peak) 3 amperes + eta (Pulse width 1 usec, 300 pps) Reverse Voltage 6 volts < Creepase Paeeee $.2mm min, sDerate 1,33mW/°C above 28°C. poacee - - (FROTSTRANTRTOR Yd | Opertg Temper 1 Soe PHOTO-TRANSISTOR Operating Temperature -55 to 100°C. Power Dissipation — T, = 25°C *#300 milliwatts Lead Soldering Time (at 260°C) 10 seconds. Vero. 70 ~— volts ‘Surge Isolation Voltage (Input to Output). See Note 2. Veto 70 volts 5656V (peek) 4000Vaus) Vepo 7 volts Steady-State Isolation Voltage (Input to Output). Collector Current (Continuous) 100 milliamps See Note 2. ‘seperate 4,0mW/°C above 25°C. 5000Vine) 3000Vnms) Individual electrical characteristics (25°C) (unless otheiwise specified) Crreaneo BarTTNe ODE wnad]_ovre_| [Pworo-teaveTon un Teak] unis | Forward Voltage — V3 1.68) volts Breakdown Voltage — Vi, — | volts (p= 60mA) . (ig # 10mA, Ip = 0) ‘anyon Forward Voltage — Vj 1,6} volts Breakdown Voltage — — | volts (I= 10mA) r (Ig ® 100A, ke © 0) Xanozo Forward Voltage — Vp 1.7] volts Breakdown Voltage — V, — | volts an 3 =" Forward Voltage — Vy 1.4] volts irae awice a). Toro haa eel Certiod Goletar Dark Curent Toro 500| micro- Rare Curesh—Tm 10 | microamps Gee ee amps (Va " 6V) _ Capacitance — Coz — | plco ote Teak) 100) plcofareds | | “(vce = 10V, f= 1MHz) farads sq Covered under U.L. component recognition program, reference file E51868 Bi VDE Approved t0 0883/6,80 01 10b Certificate #35025 6 esses

mame —_ oy oe a is G E SOLID STATE OL DEG 3875041 0019851 & cNYs1 Cp toctectronic Specifications coupled electrical characteristics (25°C) (unless otherwise specified) . [win [tve. [MAX [units | DC Current Transfer Ratio (Ip = 10mA, Vee * 10V) CYN51 | 100 - |% i Saturation Voltage — Collector to Emitter (Ip = 20mA, Ic = 2mA) - 0.4 |volts . Isolation Resistance (Input to Output Voltage = 500Vpc. See Note 1) 100 — |gigaohms Input to Output Capacitance (Input to Output Voltage =0,f= 1 MHz. See Note 1) - 2.0 |picofarads Tum-On Time — ton (Veo = }0V, Ig =2mA, R= 1002). (See Figure 1) - 10 | microseconds| Turn-Off Time — top (Voc = 10V, fe = 2mA, Ry = 100). (See Figure 1) - 10 | microseconds NOTE 1: TE japut to dutput iokation cuttent resistance, and capacitance ate performed withthe Input terminals (ode) shorted together nd the output terminals (transistor) shorted together. Nore 2: Surge lsolation Voltoge a. Definition: Defiton: ged to protect agaist transient overaolages generated from switching and lightningnduced surges, Devies sha bs . capable of withstanding this stress, a minimum of 100 times during its useful life, Ratings shall apply over entire device operating temperature range. bh. Specification Format: See eri in teams of peak and/or RMS, 60 He voltage, of specified duration (©, 3656Vpey/4000V Rs for one minute) Test Conditions: Ter ceton of full rated 60 He sinusoidal voltage for one minut, with inital application restricted to zero voltage (i.e, zero phase), from a supply capable of sourcing SmA at rated voltage. : SteadyState Isolation Voltage a. Definition: Thos ting is used to protect against a steady-state voltage which will appear across the device isolation from an electrical source ‘Teng ir escf life: Ratings shall apply over the entire device operating temperature range fora period of 10 minutes minimum. ‘b, Specification Format: Specified in terms of D.C. and/or RMS 60 Hz sinusoidal waveform. Test Conditions: Test Contr cut ated 60 Hz sinusoidal voltage, with inital appliciion restrieted to zero voltage (ie. zero phate), from # seri capable of sourcing SmA at rated voltage, forthe duration of the test 10 | fi. --——t\\ee if ry war am Adjust Amplitude of Input Pulse for Output (ic) of 2mA "Test Circull and Voltage Waveforms 898

GE SOLID STATE on ef aa7soa1 oo1sase o Optoelectronic Speeifieations:] $$ $a iii i i i i i CNY51 TYPICAL CHARACTERISTICS T ‘of: 3 =] ne HA 1 ee 3 eee NUT . == = N i FE “COAT ma CC — a A ee a a a a Basa Ht Fae Cv TUT PA . Vp-VOLTS Vp~ FORWARD VOLTAGE VOLTS. on ipstommsan consetdenA "100 1, INPUT CHARACTERISTICS 2. FORWARD VOLTAGE TEMPERATURE COEFFICIENT : = a Fw | | ota ee 7 oA aamenrrmurrearnee TS aman reMeaaTun-e 3. DARK IcegCURRENT VS TEMPERATURE 4, logo VS TEMPERATURE 100/yommauzeo to Sage $0.0[0p 380A, Th = 90 CS ghee. Patera tri Piette eo cececin SES Sean coon eet See ce oe et os AZT ETT) eS aees eae

4 AZ 1 ee ee

tT, 5 ee i ie 6. OUTPUT CHARACTERISTICS 6, OUTPUT CHARACTERISTICS 376

G E SOLID STATE OL DE g§ 3875081 0019854 1 “NYS? Optoelectronic Specifications TYPICAL CHARACTERISTICS T 1 i oof pase PACS raise $a oie ss ‘ooo 1) TTI TTT ita =28 °c. oot ACI 7. OUTPUT CURRENT VS INPUT CURRENT 8. OUTPUT CURRENT — COLLECTOR-TO-BASE UTEND CBRE , =a => SSS in : eee ae ae = eee SaaS i ee i [a7 7 eer ea ere 8 fae — a see a Oe A mo ee Tie" = 10m) FT TI Lt Ei oes ee Sed . ese 3 pene ree § eee “ee Loo oo a ee Esl 5 Gey Sct TI pee ee tt ieee LT “NOT CT = i Hat | Ree rt Bol Stoned TL Woe, cH foe SE call) Ss H Lol Stasi —tennae | Cee it Cee ES 4 . VAGv dts ror = 8 «TUT Ti Eien TIMI atesie 11, SWITCHING SPEED VS COLLECTOR CURRENT 12, SWITCHING TIME VS Roe (NOT SATURATED) eee" 377 Hl