CNY48 GESS | Alldatasheet
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G E SOLID-STATE 7 OL DE —f3s7so81 coisa 8 &j Optoelectronic ‘Specifications es T-41-85 roo74 Photon Coupled Isolator CNY48 -73 ° Ga As Infrared Emitting Diode & 20-7 al won| max | wie. Tax. NEN Silicon Photo-Darlington Amplifier sot, Bho: al Fant | “honer ‘The GE Solid State CNY48 consists of a gallium arsenide, infrared “| oh el Ste ote ‘on tmitting diode coupled with a silicon photo-dariington amplifier ina Sam fay. ow | uabin-line package. This device is also available in Surface-Mount TP] “| i —| & im tm! oe] 10 packaging. = aaa Nt fy Ma) me | tt vam: 2) feo} absolute maximum ratings: (25°C) to 4 hee an 4 ot * jo INFRARED EMITTING DIODE Lrg] fo | ae 38 | ae | 3B Power Dissipation #100 milliwatts a Wk Ae ores Forward Current (Continuous) 60 milliamps yr 1. INBTALCEO PomiTiot weap comers Forward Cartent (ea) 3 ampere T 2 ORAL AO ayy ‘(Pulse width 1 ps 300 pps) 3 SEATING PLANE Reverse Voltage 3° volts A FOUNPLACES PHOTO-DARLINGTON ‘Storage Temperature -65 to 150°C 7 poy Operating Temperature -55 to 100°C peer Dissipation 4 nes Lead Soldering Time (at 260°C) 10 seconds Vopo 30 volts ‘Surge Isolation Voltage (Input to Output). Vepo 6 volts 2120(peaxy 1500Vams) Collector Current (Continuous) 100 milliamps Steady-State Isolation Voltage (Input to Output). ‘seperate 2.0mW/°C above 25°C amblent, 1270V peak) 900ViRms) individual electrical characteristics (25 °C) Forward Voltage Breakdown Voltage—Vearycro volts (ip = 10mA) volts (ic = 10mA, Tp = 0) Breakdown Voltage — Visryceo volts (Ic = 100A, Ip = 0) Reverse Current Breakdown Voltage ~ V(nryEno volts . (Wr =3Y) microamps| | (lr = 100A, Ip = 0) Collector Dark Current —Icgo nanoamps (Vor = 10V, Ir = 0) Capacitance Capacitance picofarads| (V=0,f= 1 MHz) picofarads | | (Vce = 10Vf=1 MHz) coupled electrical characteristics (25°C) [wn [me [max [uns | DC Current Transfer Ratio (Ip =10mA, Vee = 1V) 600 - % Saturation Voltage—Collector to Emitter (Ip =1mA Ic = 2mA) - & volts _ (p= 5mA Ic =10mA) - 8 volts : (lp = 10mA, Ic = 60mA) - 10 volts Isolation Resistance (Vio = $00Vpc) 100 - gigaohms Input to Output Capacitance (Vio = 0,f = 1MHz) - 2 picofarads Switching Speeds: (Vog = 10V, Ic= 10mA, Ry = 1009) On-Time | — - microseconds oftTime | — microseconds BS VDE Approved to 0883/6.80 0110b Certificate # 35025 372 esses
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