CNY35

CNY33 GESS | Alldatasheet

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G E SOLID STATE a1 pe fi sa7soa1 0019834 § i Optoelectronic Specifications T-41-83 Photon Coupled Isolator CNY33 . Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor, Fre re par [| ‘The GE Solid State CNY33 is a gallium arsenide, infrared emitting ha’ i diode coupled with silicon high voltage phototransistors in a dual- 2 of 8 | tent 1 Radner? | in-line package. This device is also available in Surface-Mount caring, 30 few | § | woo! So! ove | amo | 7 vebeey Mee Hey | Ew ik) ee) ay? absolute maximum ratings: (25°C) ra [E in al G | 228 | 200 | o | uo AAAL | & jaw cae | ees] t | mel as) soe) 9 INFRARED EMITTING DIODE 8 ron sl we | aa | e | wl “ ¢ Powier Dissipation 7100 milliwatts | tes aie \\ ea | mel os Forward Current (Continuous) 60 milliamps |" hf az 3a | us| ie Forward Current (Peak) 3 ampere nt ath — ce a (Pulse width 1 usec 300 pps) Ts TO RSTALLED POSITION LEAD CENTERS Reverse Voltage 6 vwlts im 2 OVERALL INSTALLED DIMENSION. ‘berate 1.33mW/°C above 25°C amblont ob, THESE MEASUREMENTS ARE MADE PROM THE I-04 Foun races PHOTO-TRANSISTOR [roratoevice Power Dissipation **300 milliwatts ‘Storage Temperature -55 to 150°C Vero. 300 volts Operating Temperature -55 to 100°C eno 300 volts Lead Soldering Time (at 260°C) 10 seconds. VeBo. 7 volts ‘Surge Isolation Voltage (Input to Output). Collector Current 100 milliamps 3535V gaa 2500V aus; (Continuous) Steady-State Isolation Voltage (Input to Output). seDerate 4.0mW/PC above 25° ambient, - 3180Vjey 250V ass individual electrical characteristics (25°C) INFRARED EMITTING DIODE] TYP. | MAX. | UNITS || PHOTO-TRANSISTOR [min [wax. [units | Forward Voltage Lit | 15 — [volts Breakdown Voltage — Viaryceo | 300 | — } volts (r= 10mA) (ic = 1mA; Ip = 0) 1 Breakdown Voltage — Vprycno | 300 | — }volts (Ic = 100A; Ig = 0) t Reverse Current - 10 microamps }{ Breakdown Voltage ~ VcaryEB0 7| — {volts Collector Dark Current ~ Icz (Vce=200V; Ip=0, TaA= 25°C) — | 100 | nanoamps Capacitance 50 - picofarads (Vce=200V; Ip=0; T,=100°C)| — | 250 | microamps (V=0,f= 1 Miz) coupled electrical characteristics (25°C) CL DC Current Transfer Ratio (Ip = 10mA, Voge 10V) 2 )- )|- |* Saturation Voltage — Collector to Emitter (Ip = 10mA, Ic = 0.5mA) = |o1 |-04 | volts Isolation Resistance (Vio = 500Vpc) 100 | — | — | sigachms Input to Output Capacitance (Vio = O,f = IMHz) -|- 2_| picofarads Switching Speeds: ‘Tumn-On Time — (Vg = 10V, Icg = 2mA, Ry = 1002) - 5 | — | microseconds ‘Tum-Off Time— (Voce = 10V, Ice = 2mA, Ry = 1002) _- 5 | — | microseconds BY VDE Approved to 0883/6.80 01 10b Certificate # 35025 362

G E SOLID STATE OL pe fj sazsoan go19a839 ? cNy33 Optoelectronic Specifications TYPICAL CHARACTERISTICS . ,— SSS =>? SS SSlannen| See ae ——— oy he ee [eto =28'C pee CT aa a === —— or ie a a Fase! ADDO ectL—_| | [1 |rase su a = Tho 4 10 Ld ‘Ta- AMBIENT TEMPERATURE ="C 4, OUTPUT CURRENT VS INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE SS | aaa ed 1 [ee ee 2 A a CO ae pista Lee eld we CLI ieee = SS Sato ciel ee a 18 eR mnt frail i. Lt i) oe CUO : SS = SSS tH Nonmauizgn to: | § COAPEC AEST cto Fae a oot ZAI CHILI Te Vee wouTd Vy=FORWAND VOLTAGH- VOLTS Oe er quutcronTourran-vouTt 3, INPUT CHARACTERISTICS 4. OUTPUT CHARACTERISTICS SSS 1 “ ee ee [vers dey wo} PG a <i a aa CoS SS i or _——— Ce eS ZZ __fromauitn0| 110 erage 2 Betray 00 v0 toot esemi TI Lp aia rn 2 of LE a —— a 1 we ae aa 6. NORMALIZED DARK CURRENT 6. COLLECTOR BASE CURRENT VS. TEMPERATURE VS. TEMPERATURE A 363

G E SOLID STATE : ou ve —fze7so81 covayo 3 ff Optoelectronic Specifications ee . Te4I-B3 AC Input Photon Coupled Isolator CNY35 ear . Ga As Infared Emitting Diodes &NPN Silicon Photo-Transistor 4 Tre . — “The GE Solid State CNY35 consists of two gallium arsenide, infrared = “| tra ay emitting diodes connected in inverse parallel and coupled with a 7 TR aT Silicon phototransistor in a dual-in-ine package. This device is also im ¢ A available in Surface-Mount packaging. - an FEATURES: ca eran: © AC or polarity insensitive inputs ei he Fast switching speeds ky. T re yy © Built-in reverse polarity input protection aor ind q ‘© High isolation voltage sete 4 ote © High isolation resistance Beorenn «1/0 compatible with integrated circuits in Twa | | absolute maximum ratings: (25°C) (unless otherwise specified) z Tah se i 7 t = : INFRARED EMITTING DIODE Pe eae oI S| doe “ite ois |e Power Dissipation — Ta = 25°C *100 milliwatts ft oo | BB]? Power Dissipation — Ta = 25°C *100 milliwatts © 2 7m co) ue) (ic indicates collector lead Wl oay ME oe! oa] temperature 1/32” from case) Kame | is Input Current (RMS) 60 milliamps rpm bowl Input Current (Peak) +1 ampere © | oe 3a | ane} 138 (Pulse width 1 us, 300 pps) s_| 610 | os | xo] 2m | perate 1.33 mW/°C above 25°C OTE Leo POSITION LEAD CENTERS 2 OVERALL INSTALLSO OMENSION. 3 tse weasuneneNts ARE MADE FROM THE PHOTO-TRANSISTOR ‘SEATING PLANE. Power Dissipation —Ta = 25°C _*¥300 milliwatts 4 FOUR PLACES. Power Disialon —Ta =e 1500 lets | roger pee (Tc indicates collector lead temperature 1/32" from case) ‘Storage Temperature -55 to 150°C Vero 30 volts Operating Temperature -55 to 100°C Veso 70 volts Lead Soldering Time (at 260°C) 10 seconds Veno 5 volts Surge Isolation Voltage (Input to Output) Collector Current Continuous) 100 miliamps 1500V peak) 1060V(ems) aeperate 440 W/°C above 25°C Steady-State Isolation Voltage (Input to Output) ‘seeDerate 6.7 mW/°C above 25°C 950V (peak) 660Viams) individual electrical characteristics (25°C) (unless otherwise specified) [INFRARED EMITTING DIODE [wax | uwrs | [ PHOTOTRANSISTOR wn, [ wax. [unirs_ | Input Voltage — Vr 18 | volts Breakdown Voltage—Vearyceo | 30 volts (Ip = #10mA) (ic = 10mA, Ip = 0) Breakdown Voltage—Vearycno | 70 volts (ic = 100LA, Ir = 0) Breakdown Voltage—Vionyeso | 5 volts (le = 100KA, Ip = 0) Capacitance 100 | picofarads | | Collector Dark Current [ceo - nanoamps (V=0,f= 1 MHz) (Wee = 10V, Ir = 0) 364 a

G E SOLTD STATE OL De )3a7so0a1 go1n9a4i Ss | | : T4/%3 / coupled electrical characteristics (25°C) (unless otherwise specified) . [win [ wax. [units] Current Transfer Ratio (Vog = 10V, Ip = £ 10mA) BEES Saturation Voltage — Collector to Emitter (ceo = 0.5 mA, Ip = + 10mA) 04 volts Teolation Resistance Vio = 500V (note 1) - gigaohms Note 1: Tests of input to output isolation current resistance, ‘and capacitance are performed with the input terminals (Giode) shorted together and the output terminals (transistor) shorted together. Pa oN TT CeCe CLEC ye CARE IE IT Aa oT NTT TN ZCOCAZE NZI IN eggPUTPUT WAVE FORM GCE NOTE 2) pie S2nGneeen 4neneee ZENE ZEIT COCENCCIZEC ENT BEBeeNveeeeeeNva Tr NPUT WAVE FORM Aa einl a doe Note 2: These waveforms and curves aro exeograted i 4 in emolitude differences to indicate the out- ‘ i] puts corresponding to the positive and nea ‘Typleal dtferences in emplitude is 10% to is 3 1 oe 70% see-coutevon ro erence = ATE

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Optoelectronic Specifications I) TYPICAL CHARACTERISTICS - (TTT TTT Ti | B Ere cit oi oe | Sor ari } [rrr yet ot pelle Ll tld “CPOE TTT -Saeeeee ““LOLELLtE tT a een ee toma ao} ‘ooo [1 titi TTT ita = 28"e SOT ot tthe 7 a CrTTT TT tty treme cunaan ek athe 1, INPUT CHARACTERISTICS 2, OUTPUT CURRENT VS INPUT CURRENT a (=== = ee —__ en Seen | =S2== | === —— ary ‘soo 4 inet 3. DARK Icgo CURRENT VS TEMPERATURE 4, OUTPUT CURRENT VS TEMPERATURE Sa ihc eeasai a ek es E fase? Pos se es i Ee erie t po7 tS or MZ CU ee aca EE CAS Zr ooo} 7} ir fy ooo AVA CITI CIT CITI ‘ee toon ‘ae 5, OUTPUT CHARACTERISTICS 6, OUTPUT CURRENT VS BASE EMITTER RESISTANCE 366 nn

G E SOLID STATE ol ef sa7soa, 0019843 9 . CO Optoelectronic Specifications pore . . T'4/-83 TYPICAL APPLICATIONS . ‘ LOAD MONITOR AND ALARM . . POWER SWITCH 1 * MONITOR SWITCH In many computer controlled systems where 120 vac 10 A ‘AC power is controlled, load dropout due to ° 62k LOAD filament burnout, fusing, etc. or the opposite arya situation - load power when uncalled for due to a, switch failure can cause serious systems or D safety problems, This circuit provides a simple ‘AC power monitor which lights an alarm lamp 220.0 033.0 and provides a “I” input to the computer control in either of these situations while +5V 1oK 39K! leny35 maintaining complete electrical isolation be- ° a tween the logic and the power system. ; O29E2 Note that for other than resistive loads, phase ' acarm 3202 %| 1ep angle correction of the monitoring voltage - INPUT TO LOGIC ALARM divider is required. ° LIGHT RING DETECTOR O.2uf IK po--c- 7-4 oH 1 T In many telecommunications applications it is desirable to detect the presence of a rin { ' signal in a system without any direct electrical a 1 contact with the system, When the 86 Vac

96 Voo 1 1 G ring signal is applied, the output transistor of 10

| I the CNY35 is turned on indicating the presence 1 \\ of a ring signal in the isolated telecommuni- cations system, Co--~—----4 CNY35 UPS SOLID STATE TURN-ON SWITCH BATTERY + D45H8 Interruption of the 120 VAC power line turns off the CNY3S, allowing C to charge and tum on the 2N5308-D45H8 combination lak Ri Ro which activates the auxiliary power supply. n INVERTER This system features low standby drain, isola- ones ae 2N5308 STARTER tion to prevent ground loop problems and the 120VAC | Ne capability of ignoring a fixed number of “drop- 1 x ped cycles” by choice of the value of C. L-t_-> CNYSS ~' — 367