CNY32 GESS | Alldatasheet
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G E SOLID STATE a1 pe fj sa7soa2 o01983b 1 | T-Hl-83 " 4 Photon Coupled Isolator CNY32 he | Le 3 frared Emitting Diodes & NPN Silicon Photo-Transistors . Ga As Infrared Emitting Diodes & > fa fee “The GE Solid State CNY32 is a gallium arsenide, infrared emitting (FI w fp diode coupled with a silicon photo-transistor in a low-cost plastic efourt oe spe package with lad spacing, compatible to dua-in-tine package. _ thane a) ——a sc Eetopattsetege sot H -9R° Ee tB83 Row [so now TT absolute maximum ratings: (25 'C) ates Be searine) RARED EMITTING DIODE Se rane we Sat a3 a ee Ly t ywer Dissipation illiwatts g— Lee ete { Forward Current (Continvos) @ awe | CS, Ty Forward Current (Peak) 3 ampere oun veans. ean oasensions CONTROLS (Pulse width 1 usec 300 pps) eoekeearonsone Reverse Voltage 3 volts ‘ete 1.61 sore 27°C envi [foracoevce SrOTAASTOR | | Sang ert 8 was PHOTO-TRANSISTOR Operating Temperature -55 to 85°C Power Dissipation #150 milliwatts Lead Soldering Time (at 260°C) 10 seconds Vero 30 volts Surge Isolation Voltage (Input to Output) Veco 5 volts 5650V (peak) 4000V (ams) Collector Current (Continuous) 100 miflliamps Steady-State Isolation Voltage (Input to Output). ‘**Derate 2.5 mW/°C above 25°C ambient. 5300V ipa. 3750Vinmsy individual electrical characteristics (25°C) INFRARED EMITTING DIODE | 1ve. [max.| units | [ PHOTO-TRANSISTOR Twin] tve.[max[ units | Forward Voltage 11 | 17 foots Breakdown Voltage — Viaryczo volts (lr = 10mA) (Ic = 10mA, Ip = 0) Breakdown Voltage — Vigryeco volts Reverse Current — | 10 |micoramps| | (le =100uA, Ip =O) (Wr = 3V) Collector Dark Current — Iczo nanoamps (Wee = 10V, Ir = 0) Capacitance Capacitance picofarads (V=0,f= 1 MHz) 50 | — |picofarads] | (Voce = 10V, f= 1MH2) coupled electrical characteristics (25°C) [wn [rye [max] unis | DC Current Transfer Ratio (Ip = 10mA, Vee = 10V) = % Saturation Voltage — Collector to Emitter (Ip = 10mA, Ic = 0.5mA) 02 volts Isolation Resistance (Input to Output Voltage = 500Vnc) - igaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1 MHz) = picofarads Switching Speeds: Turn-On Time — (Vcr = 10V, Icp = 2mA, Ry, = 1009) 3 microseconds| ‘Tum-Off Time — (Vee = 10V, Ice = 2mA, Ry = 1002) 3 microseconds
G E SOLID STATE o1 pe —fs87soa1 o019a3a7 3 CNY32 __ Optoelectronic Specifications TYPICAL CHARACTERISTICS T4183 - (00 —— aie ee, FEE . See ete tig one A } ee i ise “TOLLE nr ae | 5 ee nO ee i — z Ee Settee Lee ——= = 3 —— a ¢ Epa a are a ——— Ye Eee ; PT § eee ete Pe Eee TT ro go} ee 2 === === = 8 ee a ee Oe a a Bee rte oe ee en A ost ite 4. OUTPUT CURRENT VS. INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE a ae a | [=] NORMALIZED TO: LL a , tt ee, ett —=——— blithe, eet ire Tl eS “ ZL eto | 7 Se 7 COO a a | ee a Se ae SS CA a a a as Cra TT) 3. INPUT CHARACTERISTICS 4, OUTPUT CHARACTERISTICS eH SCH) Sp SoS cine + ——.
2 Feat ————
CTA CT = ea 2 i “ 'o ae a <4 AZT TT ees aie ——— ro om se oe ee en s-Loub RESISTANCE OHS nay EMETURE="C Tac AMBENT TENPERATURE-PC 5. SWITCHING SPEED VS. RL 6, LEAKAGE CURRENTS VS. TEMPERATURE el