CNY21N TEMIC | Alldatasheet

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Technical content

Rev. A1, 11-Jun-96 1 (10) Optocoupler with Phototransistor Output

Description

The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm. Application Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): /C0068For application class I - IV at mains voltage ≤ 300 V /C0068For application class I - IV at mains voltage ≤ 600 V /C0068For application class I - III at mains voltage ≤ 1000 V according, to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor system interface, line receiver. 95 10533 These couplers perform safety functions according to the following equipment standards: /C0068VDE 0884 Optocoupler providing protective separation /C0068VDE 0804 Telecommunication apparatus and data processing /C0068VDE 0805/IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 V RMS ) /C0068VDE 0860/lEC 65 Safety for mains operated electronic and related household apparatus /C0068VDE 0700/IEC 335 Household equipment /C0068VDE 0160 Electronic equipment for electrical power installation /C0068VDE 0750/IEC 601 Medical equipment Pin Connection C E A (+) C (–) 95 10850

Rev. A1, 11-Jun-96 2 (10)

Features

/C0068Rated impulse voltage (transient overvoltage) V IOTM = 8 kV peak /C0068Isolation test voltage (partial discharge test voltage) V pd = 2.8 kV peak /C0068Rated isolation voltage (RMS includes DC) V IOWM = 1000 VRMS (1450 V peak) /C0068Rated recurring peak voltage (repetitive) V IORM = 1000 VRMS /C0068Creeping current resistance according to VDE 0303/IEC 112 C omparative T racking Index: CTI = 275 /C0068Thickness through insulation > 3 mm /C0068Isolation materials according to UL 94 /C0068Pollution degree 2 (DIN/VDE 0110) /C0068Climatic classification 55/085/21 (IEC 68 part 1) /C0068Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File no: E 76222 /C0068Special construction: therefore extra low coupling capacity of typical 0.3 pF, high C ommon M ode R ejection /C0068Low temperature coefficient of CTR /C0068C urrent T ransfer R atio (CTR) of typical 60% Absolute Maximum Ratings Input (Emitter) Parameters Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current IF 50 mA Forward surge current tp ≤ 10 /C0109s IFSM 1.5 A Power dissipation Tamb ≤ 25°C Ptot 120 mW Junction temperature Tj 100 °C Output (Detector) Parameters Test Conditions Symbol Value Unit Collector emitter voltage V CEO 32 V Emitter collector voltage V ECO 5 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 25°C Ptot 130 mW Junction temperature Tj 100 °C Coupler Parameters Test Conditions Symbol Value Unit AC isolation test voltage (RMS) V IO 8.2 kV Total power dissipation Tamb ≤ 25°C Ptot 250 mW Ambient temperature range Tamb –55 to +85 °C Storage temperature range Tstg –55 to +100 °C Soldering temperature 2 mm from case t ≤ 10 s Tsd 260 °C

Rev. A1, 11-Jun-96 3 (10) Maximum Safety Ratings 1) (according to VDE 0884) Input (Emitter) Parameters Test Conditions Symbol Value Unit Forward current Isi 120 mA Output (Detector) Parameters Test Conditions Symbol Value Unit Power dissipation Tamb ≤ 25°C Psi 250 mW Coupler Parameters Test Conditions Symbol Value Unit Rated impulse voltage V IOTM 8 kV Safety temperature Tsi 180 °C 1) This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Derating Diagram 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 mA ( mA ) Tamb ( °C )95 10888 Psi (mW) Isi (mA)

Rev. A1, 11-Jun-96 4 (10)

Electrical Characteristics

Tamb = 25°C Input (Emitter) Parameters Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA V F 1.25 1.6 V Breakdown voltage IR = 100 /C0109A V (BR) 5 V Junction capacitance V R = 0, f = 1 MHz C j 50 pF Output (Detector) Parameters Test Conditions Symbol Min. Typ. Max. Unit Collector emitter breakdown voltage IC = 1 mA V (BR)CEO 32 V Emitter collector breakdown voltage IE = 100 /C0109A V (BR)ECO 5 V Collector emitter cut-off current V CE = 20 V , If = 0 ICEO 200 nA Coupler Parameters Test Conditions Symbol Min. Typ. Max. Unit AC isolation test voltage (RMS) f = 50 Hz, t = 1 s V IO 8.2 kV Collector emitter saturation voltage IF = 10 mA, IC = 1 mA V CEsat 0.3 V Cut-off frequency V CE = 5 V , IF = 5 mA, R L = 100 /C0087 fc 170 kHZ Coupling capacitance f = 1 MHz C k 0.3 pF IC /IF IF = 10 mA, VCE = 5 V CTR 0.25 0.6

Figure 3. Test pulse diagram for sample test according to DIN VDE 0884

Rev. A1, 11-Jun-96 9 (10) Dimensions in mm 20.0 19.6 19.8 19.6 0.58 0.48 1.54 15.24 3.3 1.8 5.1 4.5 3.7 3.5 0.35 0.25 8.22 7.42 6.4 6.2 CE AC technical drawings according to DIN specifications 95 10948

Rev. A1, 11-Jun-96 10 (10) Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423