CNY17-3

CNY17-2 TOSHIBA | Alldatasheet

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TOSHIBA CNY 17-2,CNY 17-3,CNY 17-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR CNY17-2, CNY17-3, CNY17-4 i i AC LINE/ DIGITAL LOGIC ISOLATOR Unit in mm DIGITAL LOGIC/ DIGITAL LOGIC ISOLATOR TELEPHONE LINE RECEIVER 654 TWISTED PAIR LINE RECEIVER a HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL 3 RELAY CONTACT MONITOR 123 . 7124025, 38) 7.62 #02 The TOSHIBA Corporation CNY17 consist of a gallium arsenide 2 infrared emitting diode coupled with a silicon photo transistor in a s 025-8, dual in-line package. ° — 2 7.85~8.80 2.54 40.25 ai @ Small Package Size and Low Cost e Fast Switching Speeds : 5yus(TYP.) 11748 e High DC Current Transfer Ratio : CTR (Ip=10mA, VoR=5V) TOSHIBA 11-7A8 CNY17-2 : 63~125% Weight : 0.4g CNY17-3 : 100~200% CNY17-4 : 160~320% e@ High Isolation Resistance : 104%O (TYP.) @ High Isolation Voltage : 4400V (MIN.) PIN CONFIGURATION 1 13 Le 20 cf 5 3U L]4 1: ANODE 2: CATHODE 3: N.C. 4: EMITTER 5 : COLLECTOR 6 : BASE 96100168 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due, to theit inherent electrical sensitivity and vulnerability to physical stress. it is the responsibilty of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not disposé of the products with other industrial waste or with domestic garbage. 3 The products described in this document are subject to foreign exchange and foreign trade control laws. The information contained herein is presented only asa guide for the applications, of our products. No_ responsibilty is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under eny intellectual property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice 1998-02-27 1/6

TOSHIBA CNY 17-2,CNY 17-3, CNY 17-4 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL | RATING [Forward Current | te || ma [Forward Current Derating | atp/° | 0.8% [marc] g | Peak Forward Corret(Nou) | pp [8 | A_| = | Power Dissipation | Pp | 100 | mw | Reverse Voltage [ve [| «6 [ v | & | Collector-Emitter Voltage BVCEO 2 | Collector-Base Voltage BVcBO A Emitter-Collector Voltage BVECO E 2 =55~100 & | Lead Soldering Temperature r ¢ & | (os) sol Q [otal Package Dissipation | pr | 200 | mw _| Total Package Power ° ° Dissipation Derating | arc] 26° | mW /°C (Note) Pulse Width 1s, 300pps. * Above 25°C ambient. 1998-02-27 2/6

TOSHIBA CNY 17-2,CNY 17-3, CNY 17-4 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xaw. | rye. Max. [unr] [Forward Voltage [vr |tr=6oma | — [tt [es |v | [Reverse Current | tk fvr=av_ | — | | 0 | a | [Capacitance | Cy v=o, femme | — | a0 | — Tr | mre Lae fenanicemon owe [ow [ =| re | Gain fo} ~ Collector-Emitter & = = ® | Breakdown Voltage (BR) CEO/Io=1mA, Tr=0 |» |-|-| | n Collector-Base & | ami 7 7 | Emitter-Collector _ _ © | Breakdown Voltage (BR) ECO|1B=100HA, Tr=0 7 Vv & | Collector Dark Current Vop=10V, In=0 [| — | + | 50 | na | ™ | Collector Dark Current ICBO Vcp=10V, Irp=0 | — [01 | 20 | na | Collector-Emitter femecuae | coe [vane | = | | | or Current |_CNY17-2 | 63 | — [125 | Transfer | CNY17-3 | CTR — |Ip=10mA, VoR=5V [100 | — | 200 | Ratio ONY17-4 | 160 | — | 320 | Saturation Voltage VCE (sat) |IF=10mA, IG =2.5mA [| — | — | o4] v | a . f@ | Capacitance Input to a raunm[=[oa [=| [Isolation Resistance V=500V | — fron | — | a | DC Isolation Voltage | BVg [DC 1 minute fagon | — | — | v | . . Vep=10V, I¢=2mA Rise Fall Time ty/te RL =1000 5 | 10 | ys Rise / Fall Time Photo itp VcB=10V, I¢R=50uA Diode fr RL=1000 1998-02-27 3/6

TOSHIBA CNY17-2,CNY17-3,CNY17-4 Ip - Ta Pc - Ta 109 200 — LLELETT TTI . ELT Ty of HP Ft LET TT TTT tT Bs LITT TTT TT TTT ee orn TT TT 2 og LITT I TT Ty tt Fo tT NTT tty ge LTT TINT ae LETT EN TTT a Nee be gf TET TT NTT TTT

2 LENE ze {TIT TTT INI TTT

e ttt TINT TT ze o LITT TTT EN TTT 2 “CCPC KET 2 LTT TTT EN Ty At titi t ttt tN [4] ot Titi tit tt N |] Sa a Da AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) 5000) Tr - DR 100; In — VF 2 sookt tt — poise wom [ mew ESA Dil: Stil coe eee Zceee Ps re a = ee ee a | Fe sol ttt tt} SS 5 Pf ee 0 HT § a fe oS BEE ONY e tL |

3 SERS EEE 2 SS

es A g wp | § ALI I Ei A | 10 107 107 10° aLLT Vit tT ttt tt DUTY CYCLE RATIO DR 06 (08 1.0 12 1416 18 FORWARD VOLTAGE Vp (V) AVp/ATa — Ip Ipp - VEP

3.2 D000

[TTT TTT TT] a Ee ae a a ee RSH 8 "ES 2. PSCC co e mL | tt es tS i : A

2 A; |

Bu === < 22 gf I i 3 te Rerenmve 88-9 o_o JP) mtsquency = soot ~oa LCI - LIVI | O01 03 05 1 3.5 10 30 50 06 1.0 14 18 22 26 FORWARD CURRENT If (mA) PULSE FORWARD VOLTAGE Vpp (V) ss TTamam090 oom DIT AB

TOSHIBA CNY 17-2,CNY 17-3,CNY 17-4 Ic - Ip Ic /Ir - Ir 100) or 400 =, Sa CO TS —Vorstov Fey — Vop=10V 50|——— Vop=0.4V 0 ee ° Rina: =0.4V cem0AV TT ZY & 300 cE , LUA ZT Eg wore ot THIN PAT) = et

2 Age | ee (| TAT CITI ||

sawn a7 eee HH e | ASE T OT 1 4 — Age oy g Lf Lok | 2 s-_|+ vi wi 1 tri a = & J. WAT Tt iii SAMPLE amit ETNI_1 BCE tin Ai | BV fowne || ||] ren COMIN ° YTS a 7S Se le = vou os] ~TT_LLLI. LI oe + COLL 20mA. i Ta=25°C aaiiili mati MPMsee ceareesecs 02; 7s 0 30-30 00 2 J Py ese sont cmt y e “Cees a 3 ey Zee eee 8 [ALD eT e JA TTT Tt tt iy gecererceass Ic - Ta FI | a —— 500) V7 mS ere] FERRER EEE ogee COLLECTOR-EMITTER VOLTAGE Vog (V) 2 7 EE ME e toto LL TTT 2 === == gs HH popes ba LU g ee e “OO pS SSS | SLT Fowl PET | Be a SEE EEE EEE EEE] Hees) 6 ot CE : Home Pan “ETAT F LETT TTT TTT | PrN . 16 -40 -20 0 20 40 «60 80 = 100 a) -40 -20 0 20 40 «#460 «680 = 100 AMBIENT TEMPERATURE Ta (°C) AMBIENT TEMPERATURE Ta (°C) TOO 902-27

TOSHIBA CNY17-2,CNY17-3,CNY17-4 ICEO - Ta 0 Ip - RBE See caer aaa 2 | meme HEAT @ SSeS are-w AA aan? oon = OC i SV (Zoe | = cS FRR Ay a A ee | GPR AAA 2 om ASP

2 OY oA Ss ialiizadailii mma mtiill

8 EAS SSS SSS S| ooLLiE TTA TTT PTT

BAKE .O x a . = [LA AZ TT yy wi YA LITT TT tt Ty | BASE-EMITTER RESISTANCE Rpg (2)

8 SS SS

EEE} AMBIENT TEMPERATURE Ta (°C) SWITCHING CHARACTERISTICS — Ry, RgE — SWITCHING CHARACTERISTICS 1000, (SATURATED OPERATION) ___ (SATURATED OPERATION) Ip=5mA Ry, Cony —==ers| Ta=25°C Voo=5V

500 Gag er aan |

Vour 5V 90% B ta 4 oot LTT Le ce i we & & 4 oe ————cas 2 oo ao ET I el l ES 2 “Ue? | er qe & ip ra 30 Py PT NR g IL-7 2 “RSS Ne weceessee | pe 0 tL oT 2 oe PTHeScCUI eT Coser] AU oo HH CE 05 1 3 5 10 30 50 3M 1M 300 100 30 10k LOAD RESISTANCE Ry (kQ) BASE-EMITTER RESISTANCE Rpg (0) a 577 ae