CNC1H001

CNC1H001 PANASONIC | Alldatasheet

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Optoisolators (Photocouplers) 1Publication date: May 2002 SHF00006AED CNC1H001 Optoisolator I Features

• Housed in a surface mount package alternative to mini-flat package of 1.27 mm pitch
• Double molded package
• 2.5 kV isolation voltage
• UL approved (File No. E79920) I Applications
• Suited for interface circuits requiring high density mounting of parts, especially hybrid ICs and programmable controllers
• Signal transfer between circuits with different potentials and with impedances I Absolute Maximum Ratings Ta = 25°C 1, 3, 5, 7 : Anode 2, 4, 6, 8 : Cathode 9, 11, 13, 15 : Emitter 10, 12, 14, 16: Collector 16 15 14 13 12 11 10 9 Top View 4.4 10.3±0.3 1.27 0.4 0.5±0.3 0.15+0.10 -0.05 (1.3) Note) *1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs *2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/ °C. *3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/ °C. *4: AC voltage (t = 1.0 min., RH < 60%) Parameter Symbol Rating Unit Input (light Reverse voltage (DC) V R 6V emitting diode) Forward current (DC) I F 50 mA Pulse forward current *1 IFP 1A Power dissipation *2 PD 75 mW/ch Output (photo Co llector current I C 50 mA transistor) Collector-emitter voltage V CEO 80 V Emitter-collector voltage V ECO 7V Collector power dissipation *3 PC 120 mW/ch Isolation voltage, input to output *4 VISO 2 500 V[rms] Operating ambient temperature T opr −30 to +100 °C Storage temperature T stg −55 to +125 °C Unit: mm Pin Connection

2 SHF00006AED

Parameter Symbol Conditions Min Typ Max Unit Input Forward voltage V F IF = 50 mA 1.35 1.5 V diode Reverse current I R VR = 3 V 10 µA Capacitance C t VR = 0 V, f = 1 MHz 15 pF Output Collector-emitter dark current I CEO VCE = 20 V 5 100 nA transistor Collector-em itter voltage V CEO IC = 100 µA8 0 V Emitter-collector voltage V ECO IE = 10 µA7 V Collector capacitance C C VCE = 10 V, f = 1 MHz 10 pF Coupled Current transfer ratio *1 CTR V CE = 5 V, IF = 5 mA 100 600 % Capacitance C ISO f = 1 MHz 0.6 pF Resistance R ISO VISO = 500 V 10 11 Ω Rise time *2 tr VCC = 10 V, IC = 2 mA 4 µs Fall time *3 tf RL = 100 Ω 3 Saturation voltage V CE(sat) IF = 20 mA, IC = 1 mA 0.1 0.2 V I Electrical Characteristics Ta = 25°C ± 3°C Note) *1: CTR = IC / IF × 100% *2: Rise time is defined as the time required for the I C to rise from 10% to 90% of peak value. *3: Fall time is defined as the time required for the I C to decrease from 90% to 10% of peak value. Input and output are practiced by electricity. The device is designed be disregarded radiation. PC , PD  Ta IF  VF IC  IF Ambient temperature Ta (°C) Collector power dissipation , power dissipation PC , PD (mW) 160 120 0 2 04 06 08 0 1 2 0 100−20 PC PD Ta = 25°C Forward voltage VF (V) Forward current IF (mA) Forward current IF (mA) Collector current IC (mA) 102 10−1 10−2 10−1 11 0 1 0 2 VCC = 5 V Ta = 25°C

IC  VCE ∆IC  Ta ICEO  Ta tr  IC tf  IC Frequency characteristics Collector current IC (mA) Collector-emitter voltage VCE (V) 02468 1 0 1 2 25 mA 20 mA 15 mA 10 mA 5 mA 1 mA 2 mA IF = 30 mA Ambient temperature Ta (°C) Relative collector current ∆IC (%) 180 140 100 −20 0 40 60 20 80 100 10−2 −40 −2 00 2 04 06 0 10−1 104 103 102 10080 Collector-emitter dark current ICEO (nA) Ambient temperature Ta (°C) VCE = 20 V Collector current IC (mA) Rise time tr (µs) 102 10−1 10−2 10−1 11 0 1 0 2 10% 90% td tr tf RL VCC V1 V2 50 Ω Sig. in RL = 1 kΩ 500 Ω 100 Ω VCC = 10 V Ta = 25°C Collector current IC (mA) Fall time tf (µs) 102 10−1 10−2 10−1 11 0 1 0 2 10% 90% td tr tf RL VCC V1 V2 50 Ω Sig. in RL = 1 kΩ 500 Ω 100 Ω VCC = 10 V Ta = 25°C Frequency f (kHz) Relative power output P (dB) 102 10−1 10−2 11 0 1 0 2 103 Ta = 25°C IF = 5 mA 2 mA

2002 MAY

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Govern- ment if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without no- tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. IGallium arsenide material (GaAs) is used in this product. Therefore, do not burn, destroy, cut, crush, or chemi- cally decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordi- nary industrial waste or household refuse when dis- posing of GaAs-containing products.