CNB2001 PANASONIC | Alldatasheet

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Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used High current-transfer ratio Input and output are handled electrically. This product is not designed to withstand radiation. Reflective Photosensors (Photo Reflectors) 3.4 1.8 4.3–0.3 2.7 0.35 0.05+0.1–0.05 0.15 1.5 0.854-0.7 4-0.5 Unit : mm Pin connection /,/,/, /,/, Chip center C0.5 1: Anode 2: Cathode 3: Emitter 4: Collector Color of rank 14 32 /,/, /,/, (Note) Tolerance unless otherwise specified is –0.2 IF /,/, /,/, 50Ω Sig.IN V CC /, /,/,/, /,/,/, /,/, d = 1mm Evaporated Al Glass plate Sig. OUT R LV CC IC /,/, /,/,/, /,/,/, /,/, d = 1mm Evaporated Al Glass plate /,/, R L 10% 90% tr tf tr : Rise time tf : Fall time Sig.OUT Sig.IN Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Input (Light Reverse voltage (DC) V R 6V emitting diode)Forward current (DC) IF 50 mA Power dissipation PD *1 75 mW Collector current IC 30 mA Output (PhotoCollector to emitter voltageV CEO 35 V transistor) Emitter to collector voltageV ECO 6V Collector power dissipationPC *2 75 mW Temperature Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –40 to +100 ˚C Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Input Forward voltage (DC) V F IF = 20mA 1.2 1.4 V characteristicsReverse current (DC) IR V R = 3V 10 µA Output characteristicsCollector cutoff current ICEO V CE = 10V 1.0 µA Collector current IC *1 V CC = 2V , IF = 4mA, RL = 100Ω , d = 1mm 0.52 15.0 mA Transfer Leakage current ID V CC = 2V , IF = 4mA, RL = 100Ω 5.0 µA characteristicsCollector to emitter saturation voltageV CE(sat) IF = 4mA, IC = 0.5mA 1.2 V Response time tr*2 V CC = 2V , IC = 10mA, 120 µstf*2 R L = 100Ω 115 *1 Output Current (IC) measurement *2 Response time measurement method (see figure below.) circuit (see figure below.) Overview CNB2001 is a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor in a single resin package. Color indication of classifications Class I C (µA) Color Q 0.52 to 1.94 Orange R 1.45 to 5.4 White S 4.0 to 15.0 Light blue *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.

CNB2001 Reflective Photosensors (Photo Reflectors) Ambient temperature Ta (˚C ) 0 2 04 06 08 0 1 0 0 – 25 IF — V F Forward voltage VF (V) Forward current IF (mA) Ta = 25˚C IC — IF 10 3 10 2 Forward current IF (mA) Collector current IC (mA) 10 10 2 10 3 10 –1 V CC = 5V Ta = 25˚C d = 1mm R L = 100Ω Relative output current IC (%) IC — Ta 160 120 Ambient temperature Ta (˚C ) V CC = 2V IF = 4mA R L = 100Ω IC — V CE 10 2 10 –1 Collector to emitter voltage VCE (V) Collector current IC (mA) 11 0 1 0 2 10 –2 10 –1 Ta = 25˚C d = 1mm V F — Ta 1.6 1.2 0.8 0.4 Ambient temperature Ta (˚C ) Forward voltage VF (V) 0 2 04 06 08 0 1 0 0 – 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 ICEO — Ta 10 3 10 2 10 –1 Ambient temperature Ta (˚C ) V CE = 10V Dark current ICEO (µA) 10 –2 11 010 –1 tr , tf — IC Collector current IC (mA) Rise time , fall time tr , tf (µs) 10 –2 10 5 10 4 10 3 10 2 Distance d (mm) IC — d 100 Relative output current IC (%) 2 46 1 0 8 V CC = 2V Ta = 25˚C I F = 4mA IF , IC — Ta Forward current, collector current IF , IC (mA) V CC = 2V Ta = 25˚C : t r : tf IF IC IF = 10mA 4mA 2mA 1mA 10mA 1mA IF = 50mA 100Ω 500Ω R L = 1kΩ d