CNB1001 PANASONIC | Alldatasheet
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Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used Overview CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. Color indication of classifications Class I C (µA) Color Q 23 to 50 Orange R 41 to 90 White S 74 to 160 Light blue *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
IF — V F Forward voltage VF (V) Forward current IF (mA) Ta = 25˚C Ambient temperature Ta (˚C ) 0 2 04 06 08 0 1 0 0 – 25 IC — IF Forward current IF (mA) Collector current IC (µA) 800 400 200 600 81 6 2 4 V CC = 5V Ta = 25˚C R L = 100Ω d = 1mm IC — V CE Collector to emitter voltage VCE (V) Collector current IC (µA) 600 400 300 200 100 500 1 45678 d = 1mm Ta = 25˚C 2 3 Distance d (mm) IC — d 100 Relative output current IC (%) 2 46 1 0 8 V CE = 2V Ta = 25˚C I F = 4mA V F — Ta 1.6 1.2 0.8 0.4 Ambient temperature Ta (˚C ) Forward voltage VF (V) 0 2 04 06 08 0 1 0 0 – 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 0 2 04 06 08 0 1 0 0– 40 – 20 ICEO — Ta 10 –2 10 –3 10 –1 Ambient temperature Ta (˚C ) V CE = 10V Dark current ICEO (µA) 10 –4 11 010 –1 tr , tf — IC Collector current IC (mA) Rise time , fall time tr , tf (µs) 10–1 10 –2 10 3 10 2 V CC = 5V Ta = 25˚C : t r : tf Relative output current IC (%) IC — Ta 160 120 Ambient temperature Ta (˚C ) V CC = 2V IF = 4mA R L = 100Ω IF , IC — Ta Forward current, collector current IF , IC (mA) IF IC 15mA 10mA 8mA 6mA 4mA 2mA IF = 20mA 10mA 1mA IF = 50mA 100Ω 1kΩ R L = 2kΩ d CNB1001,CNB1002 Reflective Photosensors (Photo Reflectors)