CMXT2207 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) NPN PNP SYMBOL UNITS Collector-Base Voltage V CBO 75 60 V Collector-Emitter Voltage V CEO 40 60 V Emitter-Base Voltage V EBO 6.0 5.0 V Collector Current I C 600 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V 10 nA ICBO VCB=50V 10 nA ICBO VCB=60V, TA=125°C 10 µA ICBO VCB=50V, TA=125°C 10 µA IEBO VEB=3.0V 10 nA ICEV VCE=60V, VEB=3.0V 10 nA ICEV VCE=30V, VBE=0.5V 50 nA BVCBO IC=10µA7 5 6 0 V BVCEO IC=10mA 40 60 V BVEBO IE=10µA 6.0 5.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 0.4 V VCE(SAT) IC=500mA, IB=50mA 1.0 1.6 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 1.3 V VBE(SAT) IC=500mA, IB=50mA 2.0 2.6 V hFE VCE=10V, IC=0.1mA 35 75 hFE VCE=10V, IC=1.0mA 50 100 hFE VCE=10V, IC=10mA 75 100 hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 50 fT VCE=20V, IC=20mA, f=100MHz 300 MHz fT VCE=20V, IC=50mA, f=100MHz 200 MHz CMXT2207 SURFACE MOUNT SUPERmini™ DUAL COMPLEMENTARY SILICON TRANSISTOR SOT-26 CASE Central Semiconductor Corp. TM R2 (06-August 2003) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: X07
Semiconductor Corp. TM SOT-26 CASE - MECHANICAL OUTLINE CMXT2207 SURFACE MOUNT SUPERmini™ DUAL COMPLEMENTARY SILICON TRANSISTOR R2 (06-August 2003) LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: X07 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS Cob VCB=10V, IE=0, f=1.0MHz 8.0 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF Cib VEB=2.0V, IC=0, f=1.0MHz 30 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 k Ω hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 k Ω hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10 -4 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 x10 -4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 µmhos hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 µmhos rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF V CE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz 4.0 dB ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 ns td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 40 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns