CMUT2222A CENTRAL | Alldatasheet

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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. Marking Code is PC1. CMUT2222A ULTRAmini™ SURFACE MOUNT NPN SILICON TRANSISTOR SOT-523 CASE Central Semiconductor Corp. TM R1 ( 2 -October 2001) MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C 600 mA Power Dissipation P D 250 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 500 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 10 nA ICBO VCB=60V, TA=125°C 10 µA IEBO VEB=3.0V 10 nA ICEV VCE=60V, VEB=3.0V 10 nA BVCBO IC=10µA 75 V BVCEO IC=10mA 40 V BVEBO IE=10µA 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 V VCE(SAT) IC=500mA, IB=50mA 1.0 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 V hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40

LEAD CODE: 1) Base 2) Emitter 3) Collector Central Semiconductor Corp. TM MECHANICAL OUTLINE - SOT-523 CMUT2222A ULTRAmini™ SURFACE MOUNT NPN SILICON TRANSISTOR BOTTOM VIEW I H G F E D C A B R1 ( 2 -October 2001) ELECTRICAL CHARACTERISTICS: Continued SYMBOL TEST CONDITIONS MIN MAX UNITS fT VCE=20V, IC=20mA, f=100MHz 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 k Ω hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 k Ω hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10 -4 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 x10 -4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 µmhos hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 µmhos rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF V CE=10V, IC=100µA, RS=1.0kΩ , f=1.0kHz 4.0 dB td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns