CMSD2836 CENTRAL | Alldatasheet
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Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2836 and CMSD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded SUPERmini surface mount package, designed for high speed switching applications. CMSD2836 CMSD2838 SUPERmini DUAL SILICON SWITCHING DIODE SOT-323 CASE Central Semiconductor Corp. TM R1 ( 30-August 2001) MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 75 V Average Forward Current I O 200 mA Peak Forward Current I FM 300 mA Power Dissipation P D 250 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=100µA 75 V IR VR=50V 100 nA VF IF=10mA 1.0 V VF IF=50mA 1.0 V VF IF=100mA 1.2 V CT VR=0, f=1 MHz 1.5 4.0 pF trr IR=IF=10mA, RL=100Ω , Rec. to 1.0mA 4.0 ns The following configurations are available: CMSD2836 DUAL, COMMOM ANNODE MARKING CODE: A2C CMSD2838 DUAL, COMMON CATHODE MARKING CODE: A6C
Semiconductor Corp. TM SOT-323 CASE - MECHANICAL OUTLINE CMSD2836 CMSD2838 SUPERmini DUAL SILICON SWITCHING DIODE R1 ( 30-August 2001) CMSD2836 CMSD2838