CMSD2005S CENTRAL | Alldatasheet
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DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-323 CASE Central Semiconductor Corp. TM R0 (17-August 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-323 surface mount package, designed for applications requiring high voltage capability. MARKING CODE: B5D MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 300 V Peak Repetitive Reverse Voltage V RRM 350 V Peak Repetitive Reverse Current I O 200 mA Continuous Forward Current I F 225 mA Peak Repetitive Forward Current I FRM 625 mA Forward Surge Current, tp= 1µs I FSM 4.0 A Forward Surge Current, tp= 1s I FSM 1.0 A Power Dissipation P D 275 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=280V 100 nA IR VR=280V, TA=150°C 100 µA BVR IR=100µA 350 V VF IF=20mA 0.87 V VF IF=100mA 1.0 V VF IF=200mA 1.25 V CT VR=0, f=1.0 MHz 5.0 pF trr IR=IF=30mA, Rec. to 3.0mA, RL=100Ω 50 ns
Semiconductor Corp. TM SOT-323 CASE - MECHANICAL OUTLINE CMSD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES R0 (17-August 2004) MARKING CODE: B5D LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 D1 D2