CMSD2004S_10 CENTRAL | Alldatasheet

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DUAL, IN SERIES SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: B6D MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 300 V Peak Repetitive Reverse Voltage V RRM 300 V Peak Repetitive Reverse Current I RRM 200 mA Continuous Forward Current I F 225 mA Peak Repetitive Forward Current I FRM 625 mA Peak Forward Surge Current, tp=1.0μs I FSM 4.0 A Peak Forward Surge Current, tp=1.0s I FSM 1.0 A Power Dissipation P D 275 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR V R=240V 100 nA IR V R=240V, TA=150°C 100 μA BVR I R=100μA 300 V VF I F=100mA 1.0 V CT V R=0, f=1.0MHz 5.0 pF trr I F=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns SOT-323 CASE R6 (8-February 2010) www.centralsemi.com

DUAL, IN SERIES SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: B6D PIN CONFIGURATION www.centralsemi.com R6 (8-February 2010)