CMSD2004S CENTRAL | Alldatasheet
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Technical content
Semiconductor Corp. TM 280 SOT-323 CASE CMSD2004S HIGH VOLTAGE SWITCHING DIODE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. The following configurations are available: CMSD2004S DUAL, IN SERIES MARKING CODE: B6D MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 240 V Peak Repetitive Reverse Voltage V RRM 300 V Peak Repetitive Reverse Current I O 200 mA Continuous Forward Current I F 225 mA Peak Repetitive Forward Current IFRM 625 mA Forward Surge Current, tp=1 ms I FSM 4000 mA Forward Surge Current, tp=1 s I FSM 1000 mA Power Dissipation P D 250 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance QJA 500 °C/W ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNIT BV R IR =100mA 300 V IR VR =200V - nA IR VR =200V, TA=150°C - mA IR VR =240V 100 nA IR VR =240V, TA=150°C 100 mA VF IF=100mA 1.0 V C T VR =0, f=1 MHz 5.0 pF trr IF=IR =30mA, RECOV. TO 3.0mA,R L=100W 50 ns NEW SUPERmini SUPER TM
/c38/c20 /c36 /c21 /c36 /c20/c15 /c3 /c38/c21 LEAD CODE All dimensions in inches (mm). TOP VIEW