CMS2302-HF COMCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Advanced high cell density trench technology. - Super low gate charge. - Excellent CdV/dt effect decline. - Green device available.

Description

REV:B Page 1SP-JTR03 Mechanical data - Case: SOT-23, molded plastic. Maximum Ratings (at Ta=25°C unless otherwise noted) Drain-Source voltage 20 Gate-Source voltage Continuous drain current, VGS @ 4.5V Pulsed drain current 2 14.4 Power dissipation Operating junction and storage temperature range -55 ~ +150 SymbolParameter Ratings Unit V V A A A W1.0 2.8 3.6 ±12 VDS VGS Thermal Data TJ, TSTG ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C UnitSymbolParameter Max. Value °C/W125RθJAThermal resistance junction-ambient The CMS2302 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The CMS2302 meet the RoHS and Green Product requirement with full function reliability approved.

Electrical Characteristics (at TA=25°C unless otherwise noted) MOSFET Drain-Source breakdown voltage BVDSS 20 VGS=0, ID=250µA Gate threshold voltage VGS(th) 0.4 Forward transconductance gfs 10 Gate-Source leakage current IGSS ±100 nA VGS= ±12V Drain-Source leakage current (TJ=25°C) 1 Drain-Source leakage current (TJ=55°C) 5 µA Static drain-source on-resistance 2 RDS(ON) mΩ Total gate charge2 Qg 4.6 Gate-Source charge 0.7 Gate-Drain (“Miller”) change 1.5 nC VDS=15V VGS=4.5V Turn-on delay time2 Td(on) 1.6 Rise time Tr 42 Turn-off delay time 14 Fall time 7 ns VDS=10V ID=3A VGS=4.5V RG=3.3Ω Input capacitance Ciss 310 Output capacitance 49 Reverse transfer capacitance 35 pF VGS=0V VDS=15V f=1.0MHz Diode forward voltage 2 VSD 1.2 Continuous source current IS 3.6 VG=VD=0V, Force Current IDSS Qgs Qgd SymbolParameter Test ConditionsUnitMax.Typ.Min. S V V 1.2 Td(off) Tf Coss Crss VDS=VGS, ID=250µA VDS=5V, ID=3A VDS=16V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=3A VGS=2.5V, ID=2A ID=3A Source-Drain Diode SymbolParameter Test ConditionsUnitMax.Typ.Min. IS=1A, VGS=0V, TJ=25°C V A Comchip Technology CO., LTD. REV:B Page 2SP-JTR03 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. 3. The power dissipation is limited by 150°C junction temperature. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% 1. Surface mounted on a 1 inch² FR-4 board with 2OZ copper.Notes: 1, 4

Comchip Technology CO., LTD. REV:B Page 3SP-JTR03 1.8 1.4 1.0 0.6 0.2 120 100 0.1 0.01 0.1 1 10 100 I D= 3A 1 4 7 10 0 0.5 1.0 1.5 2.0 1.8 1.4 1.0 0.6 0.2 Fig.6 - Forward Characteristics of Reverse Fig.5 - Safe Operating Area -50 0 50 100 150 -50 0 50 100 150 0 0.3 0.6 0.9 1.2 Fig.3 - Normalized VGS(th) vs. TJ Fig.4 - Normalized RDSON vs. TJ Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Normalized RDSON RDSON, (mΩ) Normalized VGS(TH), (V)Drain Current, ID (A) Drain Current, ID (A) Source Current, Is (A) Drain-to-Source Voltage, VDS (V) Gate-to-Source Voltage, VGS (V) Drain-to-Source Voltage, VDS (V) Fig.1 - Typical Output Characteristics Fig.2 - On-Resistance vs.G-S Voltage Source-to-Drain Voltage, VSD (V) Typical Characteristic

Comchip Technology CO., LTD. REV:B Page 4SP-JTR03 0 1 2 3 4 5 1 5 9 13 17 21 1000 100 4.5 3.0 1.5 V DS=15V I D=3.0A 0.0001 0.001 0.01 0.1 1 10 100 1000 0.1 0.01 0.001 0.0001 Gate to Source Voltage, VGS (V) Capacitance, (pF) Fig.7 - Gate Charge Characteristics Fig.8 - Capacitance Characteristics Fig.9 - Normalized Maximum Transient Thermal Impedance Fig.10 - Switching Time Waveform Fig.11 - Gate Charge Waveform Drain-to-Source Voltage, VDS (V)Total Gate Charge, QG (nC) Pulse Width, t (sec) Normalized Transient Response, RθJA

Reel Taping Specification Comchip Technology CO., LTD. REV:B Page 5SP-JTR03 Trailer Tape 50±2 Empty Pockets Components Leader Tape 100±2 Empty Pockets D1 D2 D 120° d F E P1 P0 W C Note: 1. A, B, and C are determined by component size. The clearance between the components and the cavity must be within 0.05mm min. to 0.50mm max. SOT-23 1.50 + 0.10 − 0.00 SYMBOL (mm) (inch) A B C d D D1 D2 See Note 1 − 0.000 SOT-23 SYMBOL (mm) (inch) E F P P0 P1 W W1 8.30 Max. 14.40 Max. 0.327 Max. 0.567 Max. B

Comchip Technology CO., LTD. REV:B Page 6 2302 2302B Standard Packaging Case Type SOT-23 REEL (pcs) Reel Size (inch) 73,000 REEL PACK SP-JTR03 Suggested P.C.B. PAD Layout SIZE (inch) 0.031 (mm) 0.80 0.60 2.02 0.024 0.080 SOT-23 1.90 0.075 A B C D A D C B 2302B Solid dot = Control code