CMS20NN10H8-HF COMCHIP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

Features

REV:A Page 1QW-JTR205 - Low gate charge. - Fast switching characteristic. Mechanical data - Case: PDFN5x6-8L, molded plastic. - Mounting position: Any. Circuit Diagram G:Gate S:Source D:Drain G2 D2 Maximum Ratings (at TA=25°C unless otherwise noted) Gate-source voltage Unit SymbolParameter VDS VGS ID V V A Continuous drain current (Note 1) VGS = 10V, TC = 25°C (silicon limit) VGS = 10V, TC = 25°C (package limit) Limits 100Drain-source voltage ±20 5.2 Pulsed drain current (Note 3) IDM A PD W Total power dissipation (Note 1) TJ, TSTG °COperating junction and storage temperature range -55 to +150 VGS = 10V, TA = 25°C VGS = 10V, TA = 70°C 4.2 IAS Continuous body diode forward current @ TC = 25°C (Note 1) 14 TC = 100°C TA = 70°C TA = 25°C A Avalanche current @ L=0.1mH EAS mJ 1.2 TC = 25°C IS ISM Continuous drain current (Note 2) VGS = 10V, TC = 100°C 13 Total power dissipation (Note 2) Avalanche energy @ L=0.5mH Pulsed body diode forward current @ TC = 25°C 56 A A 1.9 Dimensions in inches and (millimeter) PDFN5x6-8L 0.039(1.00) 0.035(0.90) 0.010(0.254) REF 0.196(4.976) 0.190(4.824) 0.201(5.096) 0.195(4.944) 0.241(6.126) 0.223(5.674) 1 2 3 4 8 7 6 5 0.050(1.27) TYP 0.074(1.87) 0.058(1.47) 0.055(1.39) 0.047(1.19) 0.034(0.87) 0.019(0.47) 0.028(0.711) 0.022(0.559) 0.141(3.575) 0.133(3.375) 0.023(0.576) 0.017(0.424) 0.018(0.45) 0.014(0.35) 0.029(0.726) 0.023(0.574)

Comchip Technology CO., LTD. REV:A Page 2QW-JTR205 Thermal Data Unit Parameter Steady state °C/W °C/W Thermal resistance, junction to case Thermal resistance, junction to ambient (Note 2) 4.5 Symbol RθJC RθJA Notes: 1. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for case where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The power dissipation PD is based on RθJA and the maximum allowed junction temp erature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Rating are based on low frequency and low duty cycles to keep initial TJ=25°C. Source-Drain Diode Qgs Qgd nC QgTotal gate charge (Note 1, 2) Gate-source charge (Note 1, 2) Gate-drain charge (Note 1, 2) VDS = 50V, ID = 5A, VGS = 10V 3.6 3.7 Turn-on delay time (Note 1, 2) Turn-off delay time (Note 1, 2) Rise time (Note 1, 2) Fall time (Note 1, 2) td(ON) tr td(OFF) tf nsVDS = 50V, ID = 5A, VGS = 10V, RGS = 1Ω Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Min Max Unit Drain-source breakdown voltage Zero gate voltage drain current Forward transconductance BVDSS IDSS RDS(ON) GFS V nAGate-source leakage IGSS S Gate-source threshold voltage VGS(th) V Typ Static Dynamic mΩStatic Drain-source on-state resistance trr Qrr nC nsReverse recovery time Recovered charge Diode forward voltage (Note 1) VSD V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA 100 1 2.5 VGS = ±20V, VDS = 0V ±100 VDS = 80V, VGS = 0V 1 VGS = 10V, ID = 5A VGS = 4.5V, ID = 4A VDS = 10V, ID = 5A 12 IS = 5A, VGS = 0V 0.8 1.2 IF = 5A, dIF/dt = 100A/µs µA Reverse transfer capacitance Input capacitance Coss Crss pF Ciss Output capacitance VDS = 50V, VGS = 0V, f = 1MHz 1100 110 RgGate resistance Ω1.3f = 1MHz Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Independent of operating temperature. Total gate charge (Note 1, 2) Qg 9.8VDS = 50V, ID = 5A, VGS = 4.5V

Comchip Technology CO., LTD. REV:A Page 3 Typical Rating and Characteristic Curves (CMS20NN10H8-HF) Fig.2 - Breakdown Voltage vs Ambient Temperature Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown, BVDSS -75 -50 -25 0 25 50 75 100 125 150 175 0.8 1.0 Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 42 6 8 10 1.2 Fig.4 - Body Diode Current vs Source-Drain Voltage Body Diode Current, IS (A) 0.6 0.8 1.0 1.2 0.2 Fig.3 - Static Drain-Source On-State Resistance vs Drain Current Drain Current, ID (A) Static Drain-Source On-State Resistance, RDS(on) (mΩ) Source-Drain Voltage, VSD (V) 0.4 0 105 15 20 105 15 20 QW-JTR205 Fig.6 - Drain-Source On-State Resistance vs Junction Temperature Junction Temperature, TJ (°C) Normalized Static Drain-Source On-State Resistance, RDS(on) -75 -50 -25 0 25 50 75 100 125 150 175 0.5 Fig.5 - Static Drain-Source On-State Resistance vs Gate-Source Voltage Gate-Source Voltage, VGS (V) Static Drain-Source On-State Resistance, RDS(on) (mΩ) 0 2 4 6 8 10 1.0 2.0 1.5 2.5 VGS= 3V 3.5V 10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V VGS= 4.5V VGS= 10V ID=5A 0.9 1.1 ID=250µA, VGS=0V TJ=150°C TJ=25°C VGS=10V, ID=5A RDS(ON)@TJ=25°C:25mΩ Typ.

Comchip Technology CO., LTD. REV:A Page 4 Fig.8 - Threshold Voltage vs Junction Temperature Junction Temperature, TJ (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 Fig.7 - Capacitance vs Drain-to-Source Voltage Drain-Source Voltage, VDS (V) Capacitance, (pF) 0 10 50 100 10000 Normalized Threshold Voltage, VGS(th) 0.4 1000 30 40 Fig.10 - Gate Charge Characteristics Total Gate Charge, Qg (nC) 0 20 Fig.9 - Forward Transfer Admittance vs Drain Current Drain Current, ID (A) Forward Transfer Admittance, GFS (S) 0.001 0.1 1 100 Gate-Source Voltage, VGS (V) 0.1 0.01 0.01 155 ID=5A VDS=50V QW-JTR205 Typical Rating and Characteristic Curves (CMS20NN10H8-HF) Junction Temperature, TJ (°C)Drain-Source Voltage, VDS (V) Fig.12 - Maximum Drain Current vs Junction Temperature Maximum Drain Current, ID (A) 25 50 75 100 125 150 175 Fig.11 - Maximum Safe Operating Area Drain Current, ID (A) VGS=10V RθJA=67°C/W 0.1 1 1000.01 0.1 0.01 100 Ciss Crss Coss 100 Ta=25°C Pulsed VDS=10V VDS=15V RDSON Limited TA=25°C, TJ=150°C VGS=10V, RθJA=67°C/W Single pulse 100ms 10ms 1ms 100µs DC 10s ID=1mA ID=250µA

Comchip Technology CO., LTD. REV:A Page 5 Case Temperature, TC (°C) Fig.13 - Single Pulse Power Rating, Junction to Ambient Pulse Width, (s) Power, (W) 500 700 0.0001 0.1 1 100.01 400 300 0.001 Fig.14 - Maximum Drain Current vs Case Temperature Maximum Drain Current, ID (A) 100 600 QW-JTR205 Typical Rating and Characteristic Curves (CMS20NN10H8-HF) 50 75 100 125 150 17525 200 TJ(MAX)=150°C TA=25°C RθJA=67°C/W Silicon limit Package limit VGS=10V,RθJC=4.5°C/W

Comchip Technology CO., LTD. Page 6 REV:A QW-JTR205 Reel Taping Specification T C P A d W P1 P0 B E F o 120 DD1D2 SYMBOL (mm) (inch) SYMBOL (mm) (inch) A B dC D D2D1 E F P0P P1 WT W1 − 0.00 − 0.000 0.693 + 0.004 − 0.004.00 ± 0.10 Trailer Device Leader 400mm (min)160mm (min) Direction of Feed PDFN5x6 -8L PDFN5x6 -8L

Case Type REEL Reel Size( pcs ) (inch) PDFN5x6-8L 3,000 13 MOSFET Part Number Marking Code Comchip Technology CO., LTD. Page 7 REV:A CMS20NN10H8-HF B020A10RD B020A 10RD XXXXPin 1 XXXX = Control code Suggested P.C.B. PAD Layout SIZE (inch) 0.024 (mm) 0.61 0.86 1.27 0.034 0.050 PDFN5x6-8L 4.42 0.174 A B C D 1.23 0.048E A B CE F G H I 1.02 0.040 3.81 0.150 F G H I 6.61 0.260 D 0.0260.66 QW-JTR205