CMS120N15D2-HF COMCHIP | Alldatasheet

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  • Super low gate charge. - Very low RDS(on) . Maximum Ratings (at TJ=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value IDM RθJC Unit V V A A °C/W Thermal resistance junction to case ID Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) PD W 150 ±20 120 600 250 -55 to +150 -55 to +150 Continuous drain current (TC=25°C) Pulsed drain current (tp = 10µs, TC=25°C) Single pulse avalanche energy (Note 3) EAS 276 mJ Continuous drain current (TC=100°C) ID 80 Thermal resistance junction to air (Note 1) RθJA °C/W0.5 Dimensions in inches and (millimeters) TO-263 0.358(9.10) 0.335(8.50) 0.315(8.00) 0.236(6.00) 0.406(10.3) 0.172(4.37) 0.058(1.47) 0.042(1.07) 0.226(5.74) 0.210(5.34) 0.104(2.64) 0.096(2.44) 0.626(15.9) 0.602(15.3) 0.054(1.37) 0.046(1.17) 0.036(0.91) 0.028(0.71) 0.019(0.48) 0.011(0.28) G S D Circuit Diagram - G : Gate - S : Source - D : Drain D G S

Comchip Technology CO., LTD. Page 2 REV:A MOSFET Electrical Characteristics (at TJ=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µABVDSS Zero gate voltage drain current VDS = 150V, VGS = 0VIDSS RDS(on) Static drain-source on-resistance (Note 2) VGS = 10V, ID = 100A Min MaxTyp Unit µA mΩ V V = V , ID = 250µADS GSVGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = 100A, VGS = 0V, TJ = 25°C V V 150 ±100 7.2 1.2Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 75V, f = 100kHz 6021 532 Switching Characteristics RDS(on) mΩ7.4VGS = 8V, ID = 50A 6.1 6.3 2.9 nsISD = 40A, VGS = 0V, di/dt = 100A/µs, VR = 30V Reverse recovery time trr nC330Reverse recovery change Qrr 103 Notes: 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. QW-JTR221 Gate threshold voltage Gate resistance RG VDS = VGS = 0V, f = 1MHz 1.8 Ω Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 75V, ID = 100A, VGS = 10V Turn-on delay time Turn-off delay time Turn-on rise time Turn-off fall time td(on) tr td(off) tf nsVDD = 75V, VGS = 10V RG = 1.6Ω, ID = 100A 0.96

Comchip Technology CO., LTD. Page 3 REV:A MOSFET Typical Rating and Characteristic Curves (CMS120N15D2-HF) Fig.1 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 2 41 5 200 Fig.3 - On-Resistance vs. Gate-Source Voltage Fig.5 - Normalized On-Resistance vs. Junction Temperature Gate-Source Voltage, VGS (V) 2 6 108 On-Resistance, RDS(ON) (mΩ) Junction Temperature, TJ (°C) 2.5 0.5 0 4 1.0 100 Normalized Static Drain-Source On State Resistance, RDS(ON) 1.5 2.0 Fig.4 - Body-Diode Characteristics IS, (A) Fig.2 - On-Resistance vs. Drain Current and Gate Voltage Drain Current, ID (A) On-Resistance, RDS(ON) (mΩ) 50 200 0.3 1.2 1.5 Source-Drain Voltage, VSD (V) 0 100 100 200 150 0.90.6 150 125-75 75-25-50 500 25 100 150 150 QW-JTR221 VGS= 4.5V VGS= 5V VGS= 5.5V VGS= 6V VGS= 7V~10V ID= 100A 150°C 25°C -55°C VGS= 10V ID= 100A VGS= 8V ID= 50A VGS= 10V VGS= 8V 150°C 25°C -55°C VDS= 20V -55°C 25°C 150°C Fig.6 - Transfer Characteristics Gate-Source Voltage, VGS (V) Drain Current, ID (A) 100 2 41 63

Fig.9 - Normalized Breakdown Voltage vs. Junction Temperature 0.95 1.1 1.05 Normalized Drain-Source Breakdown Voltage, BVDSS Junction Temperature, TJ (°C) 125-75 75-25-50 15050 0.9 1.0 0 25 100 Comchip Technology CO., LTD. Page 4 REV:A MOSFET Fig.7 - Capacitance Characteristics Drain-Source Voltage, VDS (V) C, (pF) 0.1 10000 100 1000 1 10 100 1.3 Fig.10 - Normalized VGS(th) vs. Junction Temperature Normalized Threshold Voltage, VGS(th) 1.1 1.2 0.6 0.8 Junction Temperature, TJ (°C) 125-75 75-25-50 500 25 100 150 0.7 0.5 Fig.8 - Gate-Charge Characteristics 0 906040 Qg, (nC) Gate-Source Voltage, VGS (V) 20 8010 QW-JTR221 Typical Rating and Characteristic Curves (CMS120N15D2-HF) f=100kHz Ciss Coss Crss 705030 VDS= 75V, ID= 100A ID= 250µA 0.9 1.0 ID= 250µA Fig.11 - Safe Operation Area 0.1 1 10 1000100 100 1000 Drain-Source Voltage, VDS (V) Drain Current, ID (A) TC= 25°C δ=tp/T=0.01 100ms 10ms 1ms 100µs 10µs tp=1µs

Comchip Technology CO., LTD. Page 5 REV:A MOSFET Trailer Device Leader Direction of Feed 200mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 TO-263 SYMBOL (mm) (inch) A B C d D D1 D2 − 0.004 3.937 ± 0.008 100.00 ± 0.20 0.945 ± 0.008 TO-263 Reel Taping Specification DD1D2 120° B AP dP0 P1 W F E T C QW-JTR221

Comchip Technology CO., LTD. Page 6 REV:A Marking Code Standard Packaging Case Type TO-263 REEL (pcs) Reel Size (inch) 13800 REEL PACK Part Number Marking Code CMS120N15D2-HF 072N15THB MOSFET XXX = Control code Suggested P.C.B. PAD Layout SIZE (inch) 0.110 (mm) 2.08 3.50 8.80 0.138 0.346 TO-263 9.00 0.354 A B C D 10.4 0.409E 2.30 0.091F A B C D E F 2.54 0.100G 4.00 0.157H G H 16.5 0.650I I G 072N15THB XXXG QW-JTR221