CMS10 TOSHIBA | Alldatasheet

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2000-07-18 2000-07-18 2000-07-18 2000-07-18 1111/4 /4 /4 /4 CMS10 CMS10 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE TOSHIBA is continually working to improve the quality and the reliability of its products.nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,when utilizing TOSHIBA products, to observe standards of safety,and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life,bodily injury or damage to property.In developing your designs,plese ensure that TOSHIBA products are used within specified operating ranqes as set forth in the most recent products specifications.Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. Unit:mm JEDEC - EIAJ - TOSHIBA - 0.650.65 3.8 4.7 1.7 2.4 ɹɹ ɹɹ 0.98 0 ʙʙʙʙ0.1 1:Anode 2:Cathode 0.16 Weight:0.023g

  • ●●●ELECTRICAL CHARACTERISTICA(Ta=25℃℃℃℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM(1) IFM=0.1A -0 . 3 4- V VFM(2) IFM=0.5A -0 . 4 1- V VFM(3) IFM=1.0A - 0.47 0.55 V IRRM VRRM=5V -1 . 0 - μA IRRM VRRM=40V - 8.0 500 μA Junction Capacitance Cj VR=10V,f=1.0MHz - 50 - pF On ceramic substrate Thermal Resistance (Solderring Land 2mm×2mm) ℃/W On glass-epoxy substrate (Solderrring Land 6mm×6mm) ℃/W Rth(j-l) - -1 6 ℃/W- 135 Peak Forward Voltage Repetitive Peak Reverse Current Rth(j-a) ○○○○SWITHING MODE POWER SUPPLY APPLICATIONS ○○○○PORTABLE EQUIPMENT BATTERY APPLICATIONS
  • Forward Voltage ：VFM=0.55V(Max.)
  • Average Forward Current ：IF(AV)=1.0A
  • Repetitive Peak Reverse Voltage ：VRRM=40V
  • Small & Thin Package
  • ●●●MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 40 V Average Forward Current *1 IF(AV) 1.0 (Ta=21℃) A Peak One Cycle Surge Forward Current(Non-Repetitive) IFSM 25(50Hz) A Junction Temperature Tj -40～150 ℃ Storage Temperature Tstg -40～150 ℃ *1 Glass-epoxy Substrate(Substrate size:50mm*50mm Solderin g land:6mm*6mm)

2000-07-18 2000-07-18 2000-07-18 2000-07-18 2222/4 /4 /4 /4 CMS10 HANDLING PRECAUTION Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.This current leakage and not proper operating temperature or voltage may cause thermal run. Please take forward and reverse loss into consideration when you design. 1.4 2.1 3.0 Standard Soldering pad ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹUnit:mm 1.4

2000-07-18 2000-07-18 2000-07-18 2000-07-18 3333/4 /4 /4 /4 CMS10 iF-vF 0.1 INSTANTANEOUS FORWARD VOLTAGE V F (v) INSTANTANEOUS FORWARD CURRENT iF (A) 125℃℃℃℃ 75ˆˆˆˆ 25ˆˆˆˆ Tj=150ˆˆˆˆ PF(AV)-IF(AV) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE FORWARD CURRENT I F(AV) (A) AVERAGE FORWARD POWER DISSIPATION PF(AV) (W) ЋЋЋЋ=180° DC ЋЋЋЋ=120° ЋЋЋЋ=60° rth(j-a) - t 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 TIME t (s)TIME t (s)TIME t (s)TIME t (s) TRANSIENT THERMAL IMPEDANCE rth(j-a) (℃℃℃℃/W) ON GLASS-EPOXY SUBSTRATE Soldering Landɹɹɹɹ6mm×6mm ON GLASS-EPOXY SUBSTRATE Soldering Landɹɹɹɹ2.1mm×1.4mm ON CERAMIC SUBSTRATE Soldering Landɹɹɹɹ2mm×2mm Ta Max - IF (AV) On Glass-epoxy Substrate(size:50mm*50mm,land size:6mm*6mm) 100 120 140 160 AVERAGE FORWARD CURRENT I F(AV) (A) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX (ˆˆˆˆ) ЋЋЋЋ=180° DC ЋЋЋЋ=60° ЋЋЋЋ=120° Ta Max - IF (AV) On Ceramic Substrate(size:50mm*50mm) 100 120 140 160 AVERAGE FORWARD CURRENT IF(AV) (A) MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX (ˆˆˆˆ) ЋЋЋЋ=180° DC ЋЋЋЋ=60° ЋЋЋЋ=120°

2000-07-18 2000-07-18 2000-07-18 2000-07-18 4444/4 /4 /4 /4 CMS10 IR-Tj (TYPICAL) 0.0001 0.001 0.01 0.1 100 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE T j (℃℃℃℃) REPETITIVE PEAK REVERSE CURRENT IR (mA) VR=5V VR=10V VR=30V PULSE MEASUREMENT VR=20V VR=15V VR=40V PR(AV) - VR (TYPICAL) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 01 0 2 0 3 0 4 0 REVERSE VOLTAGE V R （（（（V) AVERAGE REVERSE POWER DISSIPATION 60° 120° 180° 240° 300° DC SURGE FORWARD CURRENT (NON-REPETITIVE) 1 10 100 NUMBER OF CYCLES PEAK SURGE FORWARD CURRENT IFSM (A) Ta=25℃℃℃℃ f=50Hz Cj-VR （TYPICAL ） （TYPICAL ） （TYPICAL ） （TYPICAL ） 100 1000 1 10 100 REVERSE VOLTAGE VR (V) JUNCTION CAPACITANCE C j (pF) f=1MHz Ta=25 ℃℃℃℃