CMS06P10V8-HF COMCHIP | Alldatasheet

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  • Advanced trench technology. - Low input capacitance. - Fast switching speed. Maximum Ratings (at Tc=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value IDM Unit V V A A Operating junction temperature range Storage temperature range TJ TSTG -100 ±20 -1.6 -55 to +150 -55 to +150 Pulsed drain current (tp=10µs, TC=25°C) Single pulse avalanche energy (Note 3) EAS -24 mJ Continuous drain current (TC=25°C) Continuous drain current (TC=100°C) ID -6 ID -3.8 RθJA °C/WThermal resistance junction to air (Note 1) RθJCThermal resistance junction to case SymbolParameter Typ Unit Thermal Characteristics Min Max °C/W Power dissipation (TC=25°C) PD W25 Dimensions in inches and (millimeter) PDFN3x3-8L 0.033(0.85) 0.026(0.65) 0.030(0.75) 0.022(0.55) 0.008(0.20) 0.004(0.10) 0.122(3.10) 0.114(2.90) 0.136(3.45) 0.124(3.15) 0.100(2.55) 0.093(2.35) 0.122(3.10) 0.114(2.90) 0.016(0.40) 0.008(0.20) 0.075(1.90) 0.059(1.50) 0.008(0.20) 0.016(0.40) 0.008(0.20) 0.016(0.40) 0.043(1.10) 0.028(0.70) 0.000(0.00) 0.004(0.10) 0.000(0.00) 0.004(0.10) S S S G D D D D Circuit Diagram - G : Gate - S : Source - D : Drain D D D D S S S G Mechanical data - Case: PDFN3x3-8L, molded plastic. - Molding compound: UL flammability classification rating 94V-0. - Terminals: Matte tin plated leads, solderability per MIL-STD-202, method 208. IDContinuous drain current (TA=25°C) (Note 1) Continuous drain current (TA=100°C) (Note 1) -1ID

Comchip Technology CO., LTD. Page 2 REV:A MOSFET Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = -250µAVDSS Zero gate voltage drain current VDS = -100V, VGS = 0VIDSS RDS(on) Drain-source on-resistance (Note 2) VGS = -10V, ID = -3A Min MaxTyp Unit µA mΩ V V = V , ID = -250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±20V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = -3A, VGS = 0V V V -100 ±100 320 -2.5-1 -1.2Diode forward voltage (Note 2) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = -25V, f = 1MHz 1192 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = -50V, VGS = -10V, ID = -5A 26.5 3.5 4.2 Turn-on delay time (Note 4) Turn-off delay time (Note 4) Turn-on rise time (Note 4) Turn-off fall time (Note 4) td(on) tr td(off) tf nsVDD = -50V, ID = -3A, RG = 5Ω Switching Characteristics RDS(on) mΩ350VGS = -4.5V, ID = -3A ns IS = -5A, VGS = 0V, dI/dt = 100A/µs Reverse recovery time trr nC93Reverse recovery change Qrr Notes: 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. Gate resistance RG VGS = 0V, f = 1MHz 7 Ω 280 295 -1.8 -0.9 4. Guaranteed by design, not subject to production. QW-JTR217

Comchip Technology CO., LTD. Page 3 REV:A MOSFET Typical Rating and Characteristic Curves (CMS06P10V8-HF) Fig.4 - On-Resistance vs. Drain Current and Gate Voltage Fig.1 - Power Dissipation Case Temperature, TC (°C) Power Dissipation, PD (W) 0 125 15050 Fig.3 - Typical Output Characteristics Fig.2 - Drain Current Drain-Source Voltage, -VDS (V) 84 10 Drain Current, -ID (A) 10025 Fig.5 - On-Resistance vs. Gate-Source Voltage Fig.6 - Body-Diode Characteristics 1.50.3 Gate-Source Voltage, -VGS (V) 1000 900 500 On-Resistance, RDS(ON) (mΩ) 500 0.9 700 100 300 600 800 QW-JTR217 400 200 84 10620 VGS= -2.5V VGS= -2.8V VGS= -3.3V -3.5V~-10V VGS= -3V 95 731 25°C -55°C 150°C ID= -3A Drain Current, -ID (A) Case Temperature, TC (°C) 125 15050 10025 75 On-Resistance, RDS(ON) (mΩ) 84 1062 95 731 100 400 300 200 Drain Current, -ID (A) VGS= -4.5V VGS= -10V Source Current, -IS (A) 1.20.6 Source-Drain Voltage, -VSD (V) -55°C 25°C 150°C

Fig.8 - Transfer Characteristics Gate-Source Voltage, -VGS (V) Drain Current, -ID (A) Fig.7 - Normalized On-Resistance vs. Junction Temperature 25-75 0-25-50 7550 Junction Temperature, TJ (°C) 2.5 1.0 Normalized Static Drain-Source On-Resistance, RDS(ON) 100 125 175 2.0 0.5 Comchip Technology CO., LTD. Page 4 REV:A MOSFET Typical Rating and Characteristic Curves (CMS06P10V8-HF) Fig.11 - Normalized Breakdown Voltage vs. Junction Temperature Junction Temperature, TJ (°C) 0.90 1.10 1.15 1.05 Normalized Drain-Source Breakdown Voltage, BVDSS 0.95 1.00 Fig.9 - Capacitance Characteristics Drain-Source Voltage, -VDS (V) Capacitance, C (pF) 0.1 101 10000 100 100 Gate-Source Voltage, -VGS (V) Fig.10 - Gate Charge Characteristics Total Gate Charge, QG (nC) 250 105 15 20 30 QW-JTR217 Normalized Threshold Voltage, VGS(TH) Fig.12 - Normalized VGS(th) vs. Junction Temperature Junction Temperature, TJ (°C) 0.6 1.2 0.8 1.0 1.1 0.7 0.9 1.5 150 VGS= -4.5V, ID= -3A VGS= -10V, ID= -3A VDS= -10V 25°C -55°C 150°C 1000 f=1MHz Ciss Coss Crss

9 VDS= -50V, ID= -5A

25-75 0-25-50 7550 100 125 175150 ID= -250µA 25-75 0-25-50 7550 100 125 175150 ID= -250µA

Comchip Technology CO., LTD. Page 5 REV:A MOSFET QW-JTR217 Reel Taping Specification Trailer Device Leader Direction of Feed 200mm (min)160mm (min) SYMBOL (mm) (inch) A B C d D D1 D2 E 1.50 + 0.10 − 0.00 330.00 ± 1.00 1.75 ± 0.10 0.059 + 0.004 − 0.000 12.992 ± 0.039 0.069 ± 0.004 SYMBOL (mm) (inch) F P0 P1P W W1 PDFN3x3 -8L 3.60 ± 0.10 0.142 ± 0.004 3.60 ± 0.10 0.142 ± 0.004 1.20 ± 0.10 0.047 ± 0.004 100.00 ± 1.00 3.937 ± 0.039 13.00 ± 0.20 0.512 ± 0.008 12.00 + 0.30 − 0.10 0.472 + 0.012 − 0.004 17.80 ± 0.30 0.701 ± 0.012 DD1D2 120° T 0.25 ± 0.02 0.010 ± 0.001 A B C d E F P0P1 P W T PDFN3x3 -8L

Comchip Technology CO., LTD. Page 6 REV:A MOSFET QW-JTR217 Part Number Marking Code Marking Code Standard Packaging Case Type 5,000 REEL (pcs) Reel Size (inch) REEL PACK PDFN3x3-8L CMS06P10V8-HF 6P10 6P10 Suggested P.C.B. PAD Layout SIZE (inch) 0.017 (mm) 0.42 0.70 0.65 0.028 0.026 A B C PDFN3x3-8L 2.25 0.089D 0.0932.37 0.42 0.23 0.017 0.009 E F G 1.85 0.073H A B C D E F G H I 3.70 0.146I Pin 1 xxx XXX = Control code G