CMS04N65D-HF COMCHIP | Alldatasheet

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  • Low RDS(ON). Maximum Ratings (at TC=25°C unless otherwise noted) Drain-source voltage Gate-source voltage SymbolParameter VDS VGS Value IDM Unit V V A A ID Operating junction temperature range Storage temperature range TJ TSTG Power dissipation (TC=25°C) PD W 650 ±30 -55 to +150 -55 to +150 Continuous drain current (TC=25°C) Continuous drain current (TC=100°C) ID 2.5 Pulsed drain current (tp=10µs, TC=25°C) Single pulse avalanche energy (Note 2) EAS 200 mJ RθJA °C/WThermal resistance junction to air RθJCThermal resistance junction to case SymbolParameter Typ Unit Thermal Characteristics Min Max 1.6 100 °C/W - Low gatecharge. - Low reverse transfer capacitances. - Fast switching.

Comchip Technology CO., LTD. Page 2 REV:A MOSFET Electrical Characteristics (at TA=25°C unless otherwise noted) SymbolParameter Conditions Drain-source breakdown voltage VGS = 0V, ID = 250µAVDSS Zero gate voltage drain current VDS = 650V, VGS = 0VIDSS RDS(on) Static drain-source on-resistance (Note 1) VGS = 10V, ID = 2A Min MaxTyp Unit µA Ω V V = V , ID = 250µADS GSGate threshold voltage VGS(th) Gate-body leakage current VGS = ±30V, VDS = 0V IGSS nA Static Characteristics On Characteristics Dynamic Characteristics Source-Drain Diode Characteristics ISD = 4A, VGS = 0V V V 650 ±100 2.8 1.5Diode forward voltage (Note 1) VSD Reverse transfer capacitance Input capacitance Coss Crss Output capacitance Ciss pFVGS = 0V, VDS = 25V, f = 1MHz 610 3.5 Total gate charge Gate to drain (miller) charge Gate to source charge Qg Qgs Qgd nCVDD = 520V, VGS = 10V, ID = 4A 14.5 6.5 Turn-on delay time (Note 3) Turn-off delay time (Note 3) Turn-on rise time (Note 3) Turn-off fall time (Note 3) td(on) tr td(off) tf nsVDD = 325V, ID = 4A RG = 10Ω Switching Characteristics RDS(on) ΩVGS = 4.5V, ID = 2A ns ISD = 4A, VGS = 0V, dI/dt = 100A/µs Reverse recovery time trr µC1.2Reverse recovery change Qrr 256 Notes: 1. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 2. The EAS data shows max. rating. The test condition is VDD=100V, VGS=15V, L=50mH. 3.16 QW-JTR219 3. Guaranteed by design, not subject to production.

Comchip Technology CO., LTD. Page 3 REV:A MOSFET Typical Rating and Characteristic Curves (CMS04N65D-HF) Fig.2 - Drain Current Drain Current, ID (A) Fig.3 - Typical Output Characteristics Drain-Source Voltage, VDS (V) Drain Current, ID (A) 0 20 2510 155 Fig.5 - Safe Operation Area Drain-Source Voltage, VDS (V) 100 1000 Drain Current, ID (A) 101 Fig.6 - Body-Diode Characteristics Reverse Drain Current, ISD (A) 0.4 1.0 1.2 Source-Drain Voltage, VSD (V) Fig.1 - Power Dissipation 125 750 Power Dissipation, PD (W) 150 Fig.4 - On-Resistance vs. Drain Current and Gate Voltage 2 410 Drain Current, ID (A) Drain to Source On-Resistance, RDS(ON) (Ω) Case Temperature, TC (°C) Case Temperature, TC (°C) QW-JTR219 10025 50 12575 15010025 50 VGS= 4V VGS= 5V VGS= 6V VGS= 7V VGS= 10V 250µs pulse test TC=25°C VGS= 10V pulse duration=10µs duty cycle=0.5%Max TC=25°C 0.2 0.6 0.8 150°C 25°C 100 0.1 0.01 DC 100µs 1ms 10ms Operation in this area may be limited by RDS(ON) TJ=Max rated TC=25°C single pulse

Fig.7 - Normalized On-Resistance vs. Junction Temperature 250-25-50 7550 Junction Temperature, TJ (°C) 2.5 0.5 1.0 Normalized Drain-Source On-Resistance, RDS(ON) 100 125 150 2.0 1.5 Comchip Technology CO., LTD. Page 4 REV:A MOSFET Fig.11 - Normalized Breakdown Voltage vs. Junction Temperature 45-55 20-5-30 1759570 Junction Temperature, TJ (°C) Normalized Drain-Source Breakdown Voltage, BVDSS 120 145 Normalized Threshold Voltage, VGS(th) Fig.12 - Normalized VGS(th) vs. Junction Temperature Junction Temperature, TJ (°C) 0.75 1.15 0.85 1.00 1.05 0.80 0.90 25-75 0-25-50 1757550 100 125 150 0.65 Fig.10 - Gate Charge Characteristics Total Gate Charge, QG (nC) 0 12 Gate-Source Voltage, VGS (V) Fig.9 - Capacitance Characteristics Drain-Source Voltage, VDS (V) Capacitance, C (pF) 0.1 1 10 10000 100 Fig.8 - Transfer Characteristics Gate-Source Voltage, VGS (V) Drain Current, ID (A) 7.5 100 6 15 0.70 QW-JTR219 Typical Rating and Characteristic Curves (CMS04N65D-HF) 84 106 1.5 4.5 25°C 150°C 250µs pulse test VDS= 10V ID= 4A VDS= 130V VDS= 520VVDS= 325V 1.10 0.95 0.75 1.15 0.85 1.05 0.95 VGS= 0V ID= 250µA pulse duration=10µs duty cycle=0.5%Max VGS=10V,ID=2A 1000 Crss Ciss Coss VGS=0V,f=1MHz

Comchip Technology CO., LTD. Page 5 REV:A MOSFET Trailer Device Leader Direction of Feed 200mm (min)160mm (min) SYMBOL (mm) (inch) E F P P0 P1 T W W1 TO-252 SYMBOL (mm) (inch) A B C d D D1 D2 − 0.00 330.00 ± 1.00 − 0.008 3.937 ± 0.039 100.00 ± 1.00 0.827 ± 0.012 TO-252 Reel Taping Specification DD1D2 120° E F P P0 P1 T W A B C d QW-JTR219

Comchip Technology CO., LTD. Page 6 REV:A Marking Code Standard Packaging Case Type TO-252 REEL (pcs) Reel Size (inch) 132,500 REEL PACK Part Number Marking Code CMS04N65D-HF 4N65D Suggested P.C.B. PAD Layout SIZE (inch) 0.071 (mm) 1.80 2.70 1.50 0.106 0.059 TO-252 2.30 0.091 A B C D 6.40 0.252E 6.80 0.268F A B C D E F D 4N65D XXX = Control code XXX MOSFET G QW-JTR219