CMPSH-3E CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Voltage I FRM 350 mA Forward Surge Current, tp=10ms I FSM 750 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=100µµA4 0 5 0 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.37 0.42 V VF IF=100mA 0.61 0.80 V VF IF=200mA 0.65 1.0 V IR VR=25V 90 500 nA IR VR=25V, TA=100°C 25 100 µA CT VR=1.0V, f=1 MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE Central Semiconductor Corp. TM R2 (6-August 2003) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an SOT-23 Surface Mount Package. ♦ Enhanced specification. ♦♦ Additional Enhanced specification. CMPSH-3E: SINGLE MARKING CODE: D95E CMPSH-3AE: DUAL, COMMON ANODE MARKING CODE: DB1E CMPSH-3CE: DUAL, COMMON CATHODE MARKING CODE: DB2E CMPSH-3SE: DUAL, IN SERIES MARKING CODE: DA5E FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100mA max to 200mA max. ♦ BVR from 30V min to 40V min. ♦ VF from 1.0V max to 0.8V max.
Semiconductor Corp. TM CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES R2 (6-August 2003) SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: DB2E MARKING CODE: DA5E MARKING CODE: D95E MARKING CODE: DB1E CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE 1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2 2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1 3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2 D1 D2 D1 D2 D1 D2 LEAD CODE: LEAD CODE: LEAD CODE:LEAD CODE: