CMPFJ174 CENTRAL | Alldatasheet
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™ CMPFJ175 mn lg CMPFJ176 CMPFJ177 Semiconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA SURFACE MOUNT Phone (516) 435-1110 FAX (516) 435-1824 SILICON P-CHANNEL JFET Manufacturers of World Class Discrete Semiconductors SOT-23 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPFJ174 Series types are epoxy molded P-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for low level amplifier applications. Marking codes are 6V, 6W, 6X and 6Y respectively. MAXIMUM RATINGS (Ta=25°C) SYMBOL UNITS Gate-Drain Voltage V6D 30 Vv Gate-Source Voltage Ves 30 Vv Gate Current Ig 50 mA Power Dissipation Pp 350 mw Operating and Storage Junction Temperature Ty.Tstg -65 to +150 °C Thermal Resistance Oya 357 °CIW ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS Iess Vgs=20V 1.0 1.0 1.0 1.0 nA Ipss Vps=15V 20 100 7.0 60 2.0 25 1.5 20 mA BVgss Ig=1.0uA 30 30 30 30 v Vescott) Vps=15V, Ip=10nA 50 10 30 60 10 40 08 25 Vv "DS(ON) Vps=0.1V 85 125 250 300 Q (SEE REVERSE SIDE)
SOT-23 CASE _- MECHANICAL OUTLINE _.140(2.80) .118(3.00) "006(0.15) 041(4.05) NOMINAL NOMINAL — = 244) eee A a ne Le | MAXIMUM | -063(1.60) | | — 3 .005(0.13) | LJ : All Dimensions in Inches (mm) LEAD CODE: MARKING CODE: 1) DRAIN CMPFJ174 - 6V 2) SOURCE CMPFJ175 - 6W 3) GATE CMPFJ176 - 6X CMPFJ177 - 6Y Semiconductor Corp.