CMPF5460_15 CENTRAL | Alldatasheet
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™ CMPFS5460 CMPF5461 CMPF5462 Semiconductor Corp. 145 Adams Ave., Hauppauge, NY 11788 USA SURFACE MOUNT Phone (516) 435-1110 FAX (516) 435-1824 SILICON P-CHANNEL JFET Manufacturers of World Class Discrete Semiconductors SOT-23 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CMPF5460 Series types are epoxy molded P-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for low level amplifier applications. Marking code is 6E, 6E1 and 6E2 respectively. MAXIMUM RATINGS (Ta=25°C) SYMBOL UNITS Gate-Drain Voltage Vep 40 Vv Gate-Source Voltage Ves 40 Vv Gate Current Ig 10 mA Power Dissipation Pp 350 mw Operating and Storage Junction Temperature Ty.Tstg -65 to +150 °C Thermal Resistance OA 357 “CW ELECTRICAL CHARACTERISTICS (T,=25°C unless otherwise noted) CMPF5460 CMPF5461 CMPF5462 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS less Vgg=20V 5.0 5.0 5.0 nA 'pss Vps=15V 10 50 20 90 40 16 mA BVgss Ig=10pA 40 40 40 Vv Vescotf Vps=15V, Ip=1.0nA 075 60 10 75 18 9.0 Vv Ofs Vps=15V, Vgg=0, f=1.0kHz 10 50 145 55 20 60 umhos Ciss Vps=15V, Vgg=0, f=1.0MHz 7.0 7.0 7.0 pF Crsg Vps=15V, Vgg=0, f=1.0MHz 3.0 3.0 3.0 pF en Vps=15V, Vgg=0, f=100Hz 60 TYP. 60 TYP. 60 TYP. nV/ VHz
SOT-23 CASE - MECHANICAL OUTLINE -110(2.80) .118(3.00) NOMINAL fT | wet Uh MAX IMUM 7063(1.60) YN t 3 i .005(0.13) Hl MAX | MUM -014(0.35) 7050(1.28) All Dimensions in Inches (mm) LEAD CODE: MARKING CODE: 1) DRAIN CMPF5460 - 6E 2) SOURCE CMPF5461 - 6E1 3) GATE CMPF5462 - 6E2 Central Semiconductor Corp.