CMM4000-BD

CMM4000-BD MIMIX | Alldatasheet

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On-Chip Drain Bias Coil/DC Blocking 9.0 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Parameter Units GHz dB dB dB dB dB dB dBm dBm dBm VDC mA Min. 2.0 +4.5 100 Typ. 12.0 15.0 9.0 +/-0.5 20.0 4.5 +19.0 +39.0 +29.0 +5.0 115 Max. 18.0 +7.0 130 Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +8.5 VDC 175 mA +20 dBm -65 to +165 OC -55 to MTTF Table MTTF Table Chip Device Layout (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. Electrical Characteristics (Ambient T emperature T = 25 oC) Absolute Maximum Ratings Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) Output Second Order Intercept Point (OIP2) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V) CMM4000-BDJuly 2006 - Rev 06-Jul-06 100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant with an 80% pass rate required.

Low Noise Amplifier Measurements 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. CMM4000 Vd=5.0 V Id=110 mA Frequency (GHz) Gain (dB) CMM4000 Vd=5.0 V, Id=110 mA Frequency (GHz) Noise Figure (dB) CMM4000 Vd=5.0 V Id=110 mA -25 -20 -15 -10 Frequency (GHz) Input Return Loss (dB) CMM4000 Vd=5.0 V Id=110 mA -40 -35 -30 -25 -20 -15 -10 Frequency (GHz) Output Return Loss (dB) CMM4000 Id=110 mA Frequency (GHz) Output Power P1dB (dBm) Power Added Efficiency (%) P1dB_5V P1dB_6V P1dB_7V PAE_5V PAE_6V PAE_7V CMM4000 Vd=5.0 V Id=100 mA Frequency (GHz) OIP3/OIP2 (dBm) OIP3 OIP2 CMM4000-BDJuly 2006 - Rev 06-Jul-06

Low Noise Amplifier Measurements (cont,) 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. CMM4000 Vd=5.0 V Id=100 mA Frequency (GHz) Small Signal Gain (dB) +25 deg C +125 deg C -55 deg C CMM4000 Vd=5.0 V, Id=100 mA 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 Frequency (GHz) Output Power P1dB (dBm) +25 deg C +125 deg C -55 deg C CMM4000-BDJuly 2006 - Rev 06-Jul-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier Typical S-Parameter Data for CMM4000 Vd=5.0 V Id=110 m A Frequency S11 S11 S21 S21 S12 S12 S22 S22 (GHz) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) CMM4000-BDJuly 2006 - Rev 06-Jul-06

Bypass Capacitors - See App Note [2] (Note: Engineering designator is M393) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.076 +/- 0.010 (0.003 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.172 mg Bond Pad #1 (RF In) Bond Pad #2 (Vd) Bond Pad #3 (RF Out) Bond Pad #4 (Rs-8.5 ) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. Bond Pad #5 (Rs-12 ) Bond Pad #6 (Rs-13 ) 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier 1.000 (0.039) 0.348 (0.014) 0.0 0.0 1.890 (0.074) 1.795 (0.071) 1.675 (0.066) 1.555 (0.061) 1.414 (0.056) 0.539 (0.021) Vd RF In RF Out CMM4000-BDJuly 2006 - Rev 06-Jul-06

App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd=5V, I=115mA. Additionally there are three source resistors on chip, 13, 12 and 8.5 Ohms. One of these must be bonded to ground. Typically 12 Ohms is bonded to ground to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow additional performance adjustment. App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. Device Schematic Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. MTTF T able (TBD) (Thermal Resistance (Rth) is 82ºC/W) Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius FITs MTTF Hours Rth C/W C/W C/W Bias Conditions: Vd=5.0V, Id=115 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM4000-BDJuly 2006 - Rev 06-Jul-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM4000-BDJuly 2006 - Rev 06-Jul-06 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic work- station. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.076 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided). The work station temperature should be 310ºC +/- 10ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering Description CMM4000-BD-000X Where “X” is RoHS compliant die packed in “V” - vacuum release gel packs or “W” - waffle trays PB-CMM4000-BD CMM4000-BD evaluation module