CMLT8099 CENTRAL | Alldatasheet

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DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This device has been designed for small signal general purpose amplifier applications. MARKING CODE: C89 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 6.0 V Continous Collector Current I C 500 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=80V 0.1 μA IEBO V BE=6.0V 0.1 μA BVCBO I C=100μA 80 V BVCEO I C=10mA 80 V BVEBO I E=10μA 6.0 V VCE(SAT) I C=100mA, IB=5.0mA 0.4 V VCE(SAT) I C=100mA, IB=10mA 0.3 V VBE(ON) V CE=5.0V, IC=10mA 0.6 0.8 V hFE V CE=5.0V, IC=1.0mA 100 300 hFE V CE=5.0V, IC=10mA 100 hFE V CE=5.0V, IC=100mA 75 fT V CE=5.0V, IC=10mA, f=100MHz 150 MHz Cob V CB=10V, IE=0, f=1.0MHz 6.0 pF Cib V BE=0.5V, IC=0, f=1.0MHz 25 pF APPLICATIONS:

  • Small signal general purpose amplifiers FEATURES:
  • Device is Halogen Free by design
  • Current IC=500mA
  • Voltage VCEO=80V R2 (12-February 2014) www.centralsemi.com

LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: C89 SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION www.centralsemi.com R2 (12-February 2014)