CMLT2207 CENTRAL | Alldatasheet

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DESCRIPTION: The Central Semiconductor CMLT2207 consists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ device has been designed for small signal general purpose amplifier and switching applications. MARKING CODE: L70 MAXIMUM RATINGS: (TA=25°C) SYMBOL NPN (Q1) PNP (Q2) UNITS Collector-Base Voltage V CBO 75 60 V Collector-Emitter Voltage V CEO 40 60 V Emitter-Base Voltage V EBO 6.0 5.0 V Collector Current I C 600 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) CMLT2207 SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY SILICON TRANSISTORS SOT-563 CASE Central Semiconductor Corp. TM NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V - 10 - - nA ICBO VCB=50V - - - 10 nA ICBO VCB=60V, TA=125°C - 10 - - nA ICBO VCB=50V, TA=125°C - - - 10 nA IEBO VEB=3.0V - 10 - - nA ICEV VCE=60V, VEB(OFF)=3.0V - 10 - - nA ICEV VCE=30V, VEB(OFF)=500mV - - - 50 nA BVCBO IC=10µA7 5 - 6 0 - V BVCEO IC=10mA 40 - 60 - V BVEBO IE=10µA 6.0 - 5.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.3 - 0.4 V VCE(SAT) IC=500mA, IB=50mA - 1.0 - 1.6 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 - 1.3 V VBE(SAT) IC=500mA, IB=50mA - 2.0 - 2.6 V hFE VCE=10V, IC=0.1mA 35 - 75 - hFE VCE=10V, IC=1.0mA 50 - 100 - hFE VCE=10V, IC=10mA 75 - 100 - hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 - - - hFE VCE=10V, IC=500mA 40 - 50 - R1 (13-November 2002)

Semiconductor Corp. TM CMLT2207 SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY SILICON TRANSISTORS A B C H G F D E E 12 3 65 4 R1 (13-November 2002) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS fT VCE=20V, IC=20mA, f=100MHz 300 - - - MHz fT VCE=20V, IC=50mA, f=100MHz - - 200 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz - 25 - pF Cib VEB=2.0V, IC=0, f=1.0MHz - - - 30 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 - - k Ω hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 - - k Ω hre VCE=10V, IC=1.0mA, f=1.0kHz - 8.0 - - x10-4 hre VCE=10V, IC=10mA, f=1.0kHz - 4.0 - - x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 - - hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 - - hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 - - µmhos hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 - - µmhos rb'Cc VCB=10V, IE=20mA, f=31.8MHz 150 - - ps NF V CE=10V, IC=100µA, RS=1.0kΩ , f=1.0kHz - 4.0 - dB ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 45 ns td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 40 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 100 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA - 225 - - ns ts VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 80 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA - 60 - - ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 30 ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: L70