CMLSH-4 CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Current I FRM 350 mA Forward Surge Current, tp=10ms I FSM 750 mA Power Dissipation P D 250 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=100µA4 0 5 0 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.37 0.42 V VF IF=100mA 0.61 0.80 V VF IF=200mA 0.65 1.0 V IR VR=25V 90 500 nA IR VR=25V, TA=100°C 25 100 µA CT VR=1.0V, f=1.0 MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CMLSH-4 SURFACE MOUNT PICOminiTM DUAL, ISOLATED SILICON SCHOTTKY DIODES SOT-563 CASE Central Semiconductor Corp. TM R0 (05-June 2003) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4 are two individual electrically isolated 40 volt Schottky Diodes, in a space saving SOT-563 surface mount package. This PICOmini™ device has been designed for applications requiring fast switching speeds and a low forward voltage drop. MARKING CODE: C4E
A B C H G F D E E 12 3 65 4 Central Semiconductor Corp. TM SOT-563 CASE - MECHANICAL OUTLINE CMLSH-4 SURFACE MOUNT PICOminiTM DUAL, ISOLATED SILICON SCHOTTKY DIODES R0 (05-June 2003) LEAD CODE: 1) ANODE D1 2) NC 3) ANODE D2 4) CATHODE D2 5) NC 6) CATHODE D1 MARKING CODE: C4E