CMLM7405_10 CENTRAL | Alldatasheet
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MULTI DISCRETE MODULE ™ SURFACE MOUNT HIGH CURRENT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM7405 is a single PNP Transistor and Schottky Diode packaged in a space saving SOT-563 case is designed for small signal general purpose applications where size and operational efficiency are prime requirements. Complementary Device: CMLM3405 Combination High Current Low VCE(SAT) Transistor and Low VF Schottky Diode. MARKING CODE: C57 MAXIMUM RATINGS - Case: (TA=25°C) SYMBOL UNITS Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 1.0 A Peak Collector Current I CM 1.5 A MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 500 mA Peak Repetitive Forward Current, tp ≤1.0ms I FRM 3.5 A Peak Forward Surge Current, tp=8.0ms I FSM 10 A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO V CB=40V 100 nA IEBO V EB=6.0V 100 nA BVCBO I C=100µA 40 V BVCEO I C=10mA 25 V BVEBO I E=100µA 6.0 V VCE(SAT) I C=50mA, IB=5.0mA 25 50 mV VCE(SAT) I C=100mA, IB=10mA 40 75 mV VCE(SAT) I C=200mA, IB=20mA 80 150 mV VCE(SAT) I C=500mA, IB=50mA 150 250 mV VCE(SAT) I C=800mA, IB=80mA 220 400 mV VCE(SAT) I C=1.0A, IB=100mA 275 450 mV VBE(SAT) I C=800mA, IB=80mA 1.1 V VBE(ON) V CE=1.0V, IC=10mA 0.9 V SOT-563 CASE R1 (18-January 2010) www.centralsemi.com
MULTI DISCRETE MODULE ™ SURFACE MOUNT HIGH CURRENT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN MAX UNITS hFE V CE=1.0V, IC=10mA 100 hFE V CE=1.0V, IC=100mA 100 300 hFE V CE=1.0V, IC=500mA 100 hFE V CE=1.0V, IC=1.0A 50 fT V CE=10V, IC=50mA, f=100MHz 100 MHz Cob V CB=10V, IE=0, f=1.0MHz 15 pF ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR V R=10V 20 µA IR V R=30V 100 µA BVR I R=500µA 40 V VF I F=100µA 0.13 V VF I F=1.0mA 0.21 V VF I F=10mA 0.27 V VF I F=100mA 0.35 V VF I F=500mA 0.47 V CT V R=1.0V, f=1.0MHz 50 pF LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Collector Q1 MARKING CODE: C57 SOT-563 CASE - MECHANICAL OUTLINE www.centralsemi.com R1 (18-January 2010)