CMLM0585 CENTRAL | Alldatasheet

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Multi Discrete Module ™ SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0585 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL UNITS Power Dissipation (Note 1) P D 350 mW Power Dissipation (Note 2) P D 300 mW Power Dissipation (Note 3) P D 150 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS 8.0 V Continuous Drain Current I D 650 mA MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 500 mA Peak Repetitive Forward Current, tp≤1.0ms I FRM 3.5 A Peak Forward Surge Current, tp=8.0ms I FSM 10 A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=4.5V, VDS=0 10 μA IDSS V DS=16V, VGS=0 100 nA BVDSS V GS=0, ID=250μA 20 V VGS(th) VDS=VGS, ID=250μA 0.5 1.0 V VSD VGS=0, IS=250mA 1.1 V rDS(ON) V GS=4.5V, ID=350mA 0.25 0.36 Ω rDS(ON) V GS=2.5V, ID=300mA 0.37 0.5 Ω rDS(ON) V GS=1.8V, ID=150mA 0.8 Ω FEATURES:

  • High Current MOSFET (ID=650mA)
  • ESD protection up to 2kV
  • Low rDS(on) MOSFET (0.5Ω MAX @ VGS=2.5V)
  • Low VF Schottky Diode (0.47V MAX @ 0.5A) APPLICATIONS:
  • DC - DC Converters
  • Boost Converters
  • Motor Drive Controls
  • Battery Powered Portable Equipment Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm 2 MARKING CODE: 85C SOT-563 CASE R2 (27-September 2011) www.centralsemi.com

Multi Discrete Module ™ SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW VF SCHOTTKY DIODE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: 85C SOT-563 CASE - MECHANICAL OUTLINE ELECTRICAL CHARACTERISTICS - Q1 Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Qg(tot) V DS=10V, VGS=4.5V, ID=200mA 1.2 nC Qgs V DS=10V, VGS=4.5V, ID=200mA 0.24 nC Qgd V DS=10V, VGS=4.5V, ID=200mA 0.36 nC gFS V DS=10V, ID=200mA 200 mS Crss V DS=16V, VGS=0, f=1.0MHz 25 pF Ciss V DS=16V, VGS=0, f=1.0MHz 100 pF Coss VDS=16V, VGS=0, f=1.0MHz 21 pF ton VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 38 ns toff VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 48 ns ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR V R=10V 20 μA IR V R=30V 100 μA BVR I R=500μA 40 V V F I F=100μA 0.13 V VF I F=1.0mA 0.21 V VF I F=10mA 0.27 V VF I F=100mA 0.35 V VF I F=500mA 0.47 V CT V R=1.0V, f=1.0MHz 50 pF www.centralsemi.com R2 (27-September 2011)