CMLM0205 CENTRAL | Alldatasheet
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MAXIMUM RATINGS (SOT-563 Package): (TA=25°C) SYMBOL UNITS Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W MAXIMUM RATINGS Q1: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 60 V Drain-Gate Voltage V DG 60 V Gate-Source Voltage V GS 40 V Continuous Drain Current I D 280 mA Continuous Source Current (Body Diode) I S 280 mA Maximum Pulsed Drain Current I DM 1.5 A Maximum Pulsed Source Current I SM 1.5 A MAXIMUM RATINGS D1: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 40 V Continuous Forward Current I F 500 mA Peak Repetitive Forward Current, tp ≤ 1ms I FRM 3.5 A Forward Surge Current, tp=8ms I FSM 10 A ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSSF VGS=20V, VDS=0V 100 nA IGSSR VGS=20V, VDS=0V 100 nA IDSS VDS=60V, VGS=0V 1.0 µA IDSS VDS=60V, VGS=0V, Tj=125°C 500 µA ID(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 mA BVDSS VGS=0V, ID=10µA 60 V VGS(th) VDS=VGS, ID=250µA 1.0 2.5 V VDS(ON) VGS=10V, ID=500mA 1.0 V VDS(ON) VGS=5.0V, ID=50mA 0.15 V rDS(ON) VGS=10V, ID=500mA 2.0 Ω rDS(ON) VGS=10V, ID=500mA, Tj=125°C 3.5 Ω rDS(ON) VGS=5.0V, ID=50mA 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, Tj=125°C 5.0 Ω gFS VDS ≥ 2VDS(ON), ID=200mA 80 mmhos CMLM0205 MUL TI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE SOT-563 CASE Central Semiconductor Corp. TM R0 (12-October 2004) DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low V F Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements.
- Combination: N-Channel MOSFET and Low VF Schottky Diode. MARKING CODE: C25 TM
Semiconductor Corp. TM CMLM0205 MUL TI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE R0 (12-October 2004) ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL TEST CONDITIONS MIN MAX UNITS Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton VDD=30V, VGS=10V, ID=200mA, 20 ns toff RG=25Ω, RL=150Ω 20 ns VSD VGS=0V, IS=400mA 1.2 V ELECTRICAL CHARACTERISTICS D1 (TA=25°C) IR VR= 10V 20 µA IR VR= 30V 100 µA BVR IR= 500µA 40 V VF IF= 100µA 0.13 V VF IF= 1.0mA 0.21 V VF IF= 10mA 0.27 V VF IF= 100mA 0.35 V VF IF= 500mA 0.47 V CT VR= 1.0V, f=1.0 MHz 50 pF A B C H G F D E E 12 3 65 4 SOT-563 - MECHANICAL OUTLINE LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) DRAIN Q1 MARKING CODE: C25