CMLDM7003TG CENTRAL | Alldatasheet
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Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKING CODE: CTG MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 50 V Drain-Gate Voltage V DG 50 V Gate-Source Voltage V GS 12 V Continuous Drain Current I D 280 mA Maximum Pulsed Drain Current I DM 1.5 A Power Dissipation (Note 1) P D 350 mW Power Dissipation (Note 2) P D 300 mW Power Dissipation (Note 3) P D 150 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR V GS=5.0V 50 nA IGSSF, IGSSR V GS=10V 0.5 μA IGSSF, IGSSR V GS=12V 1.0 μA IDSS V DS=50V, VGS=0 50 nA BVDSS V GS=0, ID=10μA 50 V VGS(th) VDS=VGS, ID=250μA 0.7 1.2 V VSD VGS=0, IS=115mA 1.4 V rDS(ON) V GS=1.8V, ID=50mA 1.6 2.3 Ω rDS(ON) V GS=2.5V, ID=50mA 1.3 1.9 Ω rDS(ON) V GS=5.0V, ID=50mA 1.1 1.5 Ω gFS V DS=10V, ID=200mA 200 mS Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss V DS=25V, VGS=0, f=1.0MHz 50 pF Coss V DS=25V, VGS=0, f=1.0MHz 25 pF Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm 2
- Device is Halogen Free by design SOT-563 CASE R2 (15-April 2010) www.centralsemi.com
LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION MARKING CODE: CTG www.centralsemi.com R2 (15-April 2010)