CMLD6001DO CENTRAL | Alldatasheet
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini ™ surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C60 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 75 V Peak Repetitive Reverse Voltage V RRM 100 V Continuous Forward Current I F 250 mA Forward Surge Current, tp=1 µsec. I FSM 4000 mA Forward Surge Current, tp=1 sec. I FSM 1000 mA Power Dissipation P D 250 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=75V 500 pA BVR IR=100µA 100 V VF IF=1.0mA 0.85 V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1 MHz 2.0 pF trr IR=IF=10mA, RL=100Ω Rec. to 1.0mA 3.0 µs CMLD6001DO SURFACE MOUNT PICOmini™ DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central Semiconductor Corp. TM R0 (3-November 2003) SOT-563 CASE
Semiconductor Corp. TM CMLD6001DO SURFACE MOUNT PICOmini™ DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES R0 (3-November 2003) LEAD CODE: 1) ANODE D1 2) NC 3) CATHODE D2 4) ANODE D2 5) NC 6) CATHODE D1 MARKING CODE: C60 SOT-563 CASE - MECHANICAL OUTLINE A B C H G F D E E 12 3 65 4 Dual Opposing Configuration