CMKT2207 CENTRAL | Alldatasheet
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose and switching applications. Marking Code is K70. MAXIMUM RATINGS: (TA=25°C) SYMBOL NPN (Q1) PNP (Q2) UNITS Collector-Base Voltage V CBO 75 60 V Collector-Emitter Voltage V CEO 40 60 V Emitter-Base Voltage V EBO 6.0 5.0 V Collector Current I C 600 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 357 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) CMKT2207 ULTRAmini SURFACE MOUNT COMPLEMENTARY TRANSISTORS SOT-363 CASE Central Semiconductor Corp. TM NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V - 10 - - nA ICBO VCB=50V - - - 10 nA ICBO VCB=60V, TA=125°C - 10 - - nA ICBO VCB=50V, TA=125°C - - - 10 nA IEBO VEB=3.0V - 10 - - nA ICEV VCE=60V, VEB(OFF)=3.0V - 10 - - nA ICEV VCE=30V, VEB(OFF)=500mV - - - 50 nA BVCBO IC=10µA7 5 - 6 0 - V BVCEO IC=10mA 40 - 60 - V BVEBO IE=10µA 6.0 - 5.0 - V VCE(SAT) IC=150mA, IB=15mA - 0.3 - 0.4 V VCE(SAT) IC=500mA, IB=50mA - 1.0 - 1.6 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 - 1.3 V VBE(SAT) IC=500mA, IB=50mA - 2.0 - 2.6 V hFE VCE=10V, IC=0.1mA 35 - 75 - hFE VCE=10V, IC=1.0mA 50 - 100 - hFE VCE=10V, IC=10mA 75 - 100 - hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 - - - hFE VCE=10V, IC=500mA 40 - 50 - R0 ( 9-October 2001)
Semiconductor Corp. TM CMKT2207 ULTRAmini SURFACE MOUNT COMPLEMENTARY TRANSISTORS R0 ( 9-October 2001) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS fT VCE=20V, IC=20mA, f=100MHz 300 - - - MHz fT VCE=20V, IC=50mA, f=100MHz - - 200 - MHz Cob VCB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz - 25 - pF Cib VEB=2.0V, IC=0, f=1.0MHz - - - 30 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 - - k Ω hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 - - k Ω hre VCE=10V, IC=1.0mA, f=1.0kHz - 8.0 - - x10-4 hre VCE=10V, IC=10mA, f=1.0kHz - 4.0 - - x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 - - hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 - - hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 - - µmhos hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 - - µmhos rb'Cc VCB=10V, IE=20mA, f=31.8MHz 150 - - ps NF V CE=10V, IC=100µA, RS=1.0kΩ , f=1.0kHz - 4.0 - dB ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 45 ns td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 40 ns toff VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 100 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA - 225 - - ns ts VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 80 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA - 60 - - ns tf VCC=6.0V, IC=150mA, IB1=IB2=15mA - - - 30 ns SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 Q1 = NPN 2) Base Q1 Q2 = PNP 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1