CMFSH-3I CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25 °C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 30 V Continuous Forward Current I F 100 mA Peak Repetitive Forward Current I FRM 200 mA Forward Surge Current, tp=10ms I FSM 750 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25 °C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=25V 90 500 nA IR VR=25V, TA=100 °C 25 100 µA BVR IR=100µA3 0 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.40 0.45 V VF IF=100mA 0.74 1.00 V CT VR=1.0V, f=1.0MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CMFSH-3i DUAL, ISOLATED SILICON SCHOTTKY DIODES SOT-143 CASE Central Semiconductor Corp. TM R3 (3-December 2003) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is designed fast switching applications requiring a low forward voltage drop. MARKING CODE: C3I
Semiconductor Corp. TM SOT-143 CASE - MECHANICAL OUTLINE CMFSH-3i DUAL, ISOLATED SILICON SCHOTTKY DIODES R3 (3-December 2003) LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: C3I