CMASH-4 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 40 V Average Forward Current I O 200 mA Forward Surge Current, tp=8.3ms I FSM 600 mA Power Dissipation P D 100 mW Operating and Storage Junction Temperature T J, Tstg -65 to +125 °C Thermal Resistance ΘJA 1000 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=30V 25 200 nA BVR IR=10µA4 0 V VF IF=1.0mA 0.35 0.38 V VF IF=15mA 0.55 0.65 V VF IF=40mA 0.77 1.00 V CT VR = 0V, f=1.0 MHz 5.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-923 CASE Central Semiconductor Corp. TM R0 (13-February 2007) DESCRIPTION: The Central Semiconductor Corp. CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime requirements. MARKING CODE: A FEATURES: z Current (IO=200mA) z Low Forward Voltage Drop (VF=0.35V TYP @ 1.0mA) z Low Reverse Current (25nA TYP @ 30V) z Extremely Fast Switching (5ns Max) z Miniture, 0.8 x 0.6 x 0.4mm, ultra low height profile FEMTOmini TM Surface Mount Package. APPLICATIONS: z DC / DC Converters z Voltage Clamping z Protection Circuits z Battery powered applications including Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc.
Semiconductor Corp. TM SOD-923 CASE - MECHANICAL OUTLINE CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE R0 (13-February 2007) Lead Code: 1) Cathode 2) Anode