CM900HB-90H MITSUBISHI | Alldatasheet

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Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. CM900HB-90H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM E C EE CC E G C LABEL C E G C ECM EE CC 29.5 61.561.5 140 124 ±0.25 79.4 20.25 57±0.25 171 190 5.2 41.25 57±0.25 57±0.25 3 - M4 NUTS 8 - φ7MOUNTING HOLES 6 - M8 NUTS 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 2250V, IC = 900A, VGE = 15V VCC = 2250V, IC = 900A VGE1 = VGE2 = 15V R G = 10Ω Resistive load switching operation I E = 900A, VGE = 0V IE = 900A, die / dt = –1800A / µs (Note 1) Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied I C = 90mA, VCE = 10V IC = 900A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass V GE = 0V VCE = 0V DC, TC = 85°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Collector current Emitter current 4500 ±20 900 1800 900 1800 11100 –40 ~ +125 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 MAXIMUM RATINGS (Tj = 25°C) Symbol Item Conditions Unit Ratings V V A A A A W V N·m N·m N·m kg VCES VGES IC ICM IE (Note 2) IEM (Note 2) P C (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.90 2.40 2.40 6.00 1.20 5.20 1.80 0.009 0.018 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W 3.00 3.30 162 12.0 3.6 4.00 360 0.007 I CES IGES C ies C oes C res Q G td (on) tr td (off) tf V EC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 6.04.5 Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE , VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 125°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES 101 2310–1 571 00 23 57 1 01 23 57 1 02 103 102 100 VGE = 15V, Tj = 25°C C ies, C oes : f = 100kHz C res : f = 1MHz 6000 4000 2000 0 200 48 1 2 8000 12000 10000 18000 300 600 1200900 1500 300 600 900 1200 1500 1800 100 2468 Tj = 25°C VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 02 0 161284 Tj = 25°C CAPACITANCE CHARACTERISTICS (TYPICAL ) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) TRANSFER CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) Ic=1800A Ic=900A Ic=450A VGE =20V VGE =15V VGE =14V VGE =12V VGE =10V VGE =8V 18000 300 600 1200900 1500 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) EMITTER-COLLECTOR VOLTAGE V EC (V) EMITTER CURRENT I E (A) Tj = 25°C Tj = 125°C C ies C oes C res

Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 71 02 23 5 7 1 0 3 23 5 10–1 10–2 100 101 103 102 104 105 71 02 10–1 23 5 7 1 0 3 23 55 101 100 VCC = 2250V, VGE = ±15V R G = 10Ω , Tj = 125°C Inductive load VCC = 2250V, Tj = 125°C Inductive load IGBT drive conditions V GE = ±15V, RG = 10Ω 10–2 10–3 10–2 10–1 100 10–1 100 101 23 57 23 57 23 57 Single Pulse TC = 25°C R th(j – c)Q = 0.009K/W R th(j – c)R = 0.018K/W 00 2000 4000 6000 8000 10000 12000 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) SWITCHING TIMES (µs) COLLECTOR CURRENT I C (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL ) REVERSE RECOVERY TIME t rr (µs) EMITTER CURRENT I E (A) REVERSE RECOVERY CURRENT I rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC ) 3.0 2.5 2.0 1.5 1.0 0.5 00 5 10 15 20 30 25 GATE RESISTANCE (Ω ) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) SWITCHING ENERGY (J/P) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 300 600 900 1200 1500 1800 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) CURRENT (A) SWITCHING ENERGY (J/P) VCC = 2250V, VGE = ±15V, R G = 10Ω , Tj = 125°C, Inductive load Eon td(off) td(on) tr trr Irr tf Eoff Erec VCC = 2250V IC = 900A