CM900DU-24NF MITSUBISHI | Alldatasheet

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Mar. 2003 CM900DU-24NF APPLICATION UPS & General purpose inverters, etc MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE G Insulated Type G 2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm B : VHR-5N A : VHR-2N A,B HOUSING Type Tc measured point (The side of Cu base plate) Tc measured point (The side of Cu base plate) B A 9-M6 NUTS 12 MOUNTING HOLES PPS LABEL 10.5 5.5 129.5 11 192125.1 15.7 42 42 15.7 34.6+1.0 –0.5 34.6+1.0 –0.5 150 166 137.5±0.25 74±0.2574±0.25 1.9±0.214 1414141414 1414 8-f6.5 C2E1 E2 C1 C1E1G1 E2 G2 C2 C2E1 E2 C1 G1 E1 G2 E2 CIRCUIT DIAGRAM

Mar. 2003 VCE = VCES , VGE = 0V IC = 90mA, VCE = 10V VGE = VCES , VCE = 0V Tj = 25°C Tj = 125°C Ic = 900A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 900A, VGE = 15V VCC = 600V, IC = 900A VGE1 = VGE2 = 15V R G = 0.35Ω , Inductive load switching operation IE = 900A IE = 900A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips (IGBT part) Tc measured point is just under the chips (FWDi part) 1200 ±20 900 1800 900 1800 2550 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE V V W V N • m N • m g A A 0.5 2.5 140 600 200 800 300 500 3.4 0.049 0.078 0.021*3 0.034*3 2.2 mA V µA V m Ω nF nC ns ns µC V °C/W Ω 1.8 2.0 0.143 4800 0.016 0.35 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC , trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp.Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) ICES VGE(th) IGES VCE(sat) R (lead) C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q R th(j-c’)R R G Symbol Parameter Test conditions Limits IC = 900A, VGE = 15V

Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) 1800 1000 800 1400 1600 1200 600 400 200 0 2468 1 0 Tj = 25°CVGE = 20V 15V 12V 11V 10V 9V8V 13V 048 1 2 1 6 2 0 VCE = 10V 1400 1200 1800 1600 1000 800 600 400 200 Tj = 25°C Tj = 125°C 12001000800400 600200 1800 16001400 VGE = 15V Tj = 25°C Tj = 125°C 0 206 8 12 1610 14 18 Tj = 25°C IC = 900A IC = 360A IC = 1800A 102 103 104 01234 Tj = 25°C Tj = 125°C 10–110–1 100 101 102 103 2 10035 7 2 10135 7 2 10235 7 C ies C oes C res VGE = 0V

Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE 101 10257 10323 5 7 102 103 101 td(off) td(on) tf tr Conditions: VCC = 600V VGE = ±15V R G = 0.35Ω Tj = 125°C Inductive load 101 10223 5 7 10323 5 7 101 102 103 Irr trr 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C 0 1000 2000 3000 4000 5000 6000 7000 VCC = 400V VCC = 600V IC = 900A 100 101 102 103 012 0.5 1.5 2.5100 101 102 103 101 21 0 235 7 2 10335 7 Conditions: VCC = 600V VGE = ±15V Tj = 125°C R G = 0.35Ω Inductive load Esw(off) Esw(on) Conditions: V CC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive load Esw(off) Esw(on) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT I C (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) (°C/W) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE Q G (nC) GATE-EMITTER VOLTAGE V GE (V) IC -ESW (TYPICAL) IC (A) ESW (mJ/pulse) R G -ESW (TYPICAL) R G (Ω ) ESW (mJ/pulse) Conditions: VCC = 600V VGE = ±15V R G = 1Ω Tj = 25°C Inductive load IGBT part: Per unit base = Rth(j–c) = 0.049°C/W FWDi part: Per unit base = R th(j–c) = 0.078°C/W

Mar. 2003 100 101 102 103 012 0.5 1.5 2.5100 101 102 101 21 0 235 7 2 10335 7 Conditions: VCC = 600V VGE = ±15V Tj = 125°C R G = 0.35Ω Inductive load Err Conditions: V CC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive load Err IC -Err (TYPICAL) IE (A) Err (mJ/pulse) R G -Err (TYPICAL) R G (Ω ) Err (mJ/pulse) MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE