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< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE I N S U L A T E D T Y P E 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HC-90R 1-element in a pack Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 MAXIMUM RATINGS Symbol Item Conditions Ratings Unit VGE = 0V, Tj = -40…+125°C 4500 VCES Collector-emitter voltage VGE = 0V, Tj = −50°C 4400 V VGES Gate-emitter voltage V CE = 0V, Tj = 25°C ± 20 V IC DC, Tc = 85°C 800 A ICRM Collector current Pulse (Note 1) 1600 A IE DC 800 A IERM E m i t t e r c u r r e n t (Note 2) Pulse (Note 1) 1600 A Ptot Maximum power dissipation (Note 3) T c = 25°C, IGBT part 8300 W Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 6000 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, Q PD ≤ 10 pC 3500 V Tj Junction temperature −50 ~ +150 °C Tjop Operating junction temperature −50 ~ +125 °C Tstg Storage temperature −55 ~ +125 °C tpsc Short circuit pulse width V CC = 3200V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 s
ELECTRICAL CHARACTERISTICS
Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — — 10.0ICES Collector cutoff current VCE = VCES, VGE = 0V Tj = 125°C — 10.0 — mA VGE(th) Gate-emitter threshold voltage V CE = 10 V, IC = 80 mA, Tj = 25°C 5.8 6.3 6.8 V IGES Gate leakage current V GE = VGES, VCE = 0V, Tj = 25°C — — 0.5 µA Cies Input capacitance — 117.0 — nF Coes Output capacitance — 7.3 — nF Cres Reverse transfer capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C — 3.3 — nF QG Total gate charge VCC = 2800V, IC = 800A, VGE = ±15V, Tj = 25°C — 9.0 — µC Tj = 25°C — 3.50 — VCEsat Collector-emitter saturation voltage IC = 800 A (Note 4) VGE = 15 V Tj = 125°C — 4.40 5.10 V Tj = 25°C — 1.00 — td(on) Turn-on delay time Tj = 125°C — 0.95 1.50 µs Tj = 25°C — 0.28 — tr Turn-on rise time Tj = 125°C — 0.30 0.50 µs Tj = 25°C — 2.90 — Eon(10%) Turn-on switching energy (Note 5) Tj = 125°C — 3.55 — J Tj = 25°C — 3.10 — Eon Turn-on switching energy (Note 6) VCC = 2800 V IC = 800 A VGE = ±15 V RG(on) = 4.0 Ω Ls = 150 nH Inductive load Tj = 125°C — 3.80 — J Tj = 25°C — 3.60 — td(off) Turn-off delay time Tj = 125°C — 3.80 5.00 µs Tj = 25°C — 0.35 — tf Turn-off fall time Tj = 125°C — 0.45 1.00 µs Tj = 25°C — 1.95 — Eoff(10%) Turn-off switching energy (Note 5) Tj = 125°C — 2.55 — J Tj = 25°C — 2.15 — Eoff Turn-off switching energy (Note 6) VCC = 2800 V IC = 800 A VGE = ±15 V RG(off) = 15 Ω Ls = 150 nH Inductive load Tj = 125°C — 2.85 — J
< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 ELECTRICAL CHARACTERISTICS (continuation) Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — 2.50 — VEC Emitter-collector voltage (Note 2) IE = 800 A (Note 4) VGE = 0 V Tj = 125°C — 2.80 3.40 V Tj = 25°C — 0.70 — trr Reverse recovery time (Note 2) Tj = 125°C — 0.90 — µs Tj = 25°C — 780 — Irr Reverse recovery current (Note 2) Tj = 125°C — 850 — A Tj = 25°C — 660 — Qrr Reverse recovery charge (Note 2) Tj = 125°C — 1000 — µC Tj = 25°C — 0.85 — Erec(10%) Reverse recovery energy (Note 2) (Note 5) Tj = 125°C — 1.35 — J Tj = 25°C — 1.00 — Erec Reverse recovery energy (Note 2) (Note 6) VCC = 2800 V IC = 800 A VGE = ±15 V RG(on) = 4.0 Ω Ls = 150 nH Inductive load Tj = 125°C — 1.55 — J THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c)Q Junction to Case, IGBT part — — 15.0 K/kW Rth(j-c)D Thermal resistance Junction to Case, FWDi part — — 28.5 K/kW Rth(c-s) Contact thermal resistance Case to heat sink, grease = 1W/m·k, D(c-s) = 100m — 9.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M8 : Main terminals screw 7.0 — 22.0 N·m Ms M6 : Mounting screw 3.0 — 6.0 N·m Mt Mounting torque M4 : Auxiliary terminals screw 1.0 — 3.0 N·m m Mass — 0.9 — kg CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm ds Creepage distance 32.0 — — mm LP CE Parasitic stray inductance — 16.5 — nH RCC’+EE’ Internal lead resistance TC = 25°C — 0.18 — m Ω rg Internal gate resistance T C = 25°C — 2.5 — Ω Note1. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed Topmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD i). 3. Junction temperature (T j) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified.
< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 400 800 1200 1600 02468 Collector - Emitter Voltage [V] Collector Current [A] VGE = 10V VGE = 11VVGE = 15V VGE = 13V Tj = 25°C VGE = 16V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 800 1200 1600 02468 Collector-Emitter Saturation Voltage [V] Collector Current [A] VGE = 15V Tj = 125°C Tj = 25°C TRANSFER CHARACTERISTICS (TYPICAL) 400 800 1200 1600 0 4 8 12 16 Gate - Emitter Voltage [V] Collector Current [A] Tj = 25°C VCE = VGE Tj = 125°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 400 800 1200 1600 012345 Emitter-Collector Voltage [V] Emitter Current [A] Tj = 25°C Tj = 125°C
< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 100 1000 0.1 1 10 100 Collector-Emitter Voltage [V] Capacitance [nF] Cies VGE = 0V, Tj = 25°C f = 100kHz Coes Cres HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 400 800 1200 1600 Collector Current [A] Switching Energies [J] Erec VCC = 2800V, VGE = ±15V RG(on) = 4.0Ω, RG(off) = 15Ω LS = 150nH, Tj = 125°C Inductive load Eof f Eon GATE CHARGE CHARACTERISTICS (TYPICAL) -15 -10 02468 1 0 Gate Charge [µC] Gate-Emitter Voltage [V] VCE = 2800V, IC = 800A Tj = 25°C HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2468 1 0 Gate resistor [Ohm] Switching Energies [J]Erec VCC = 2800V, IC = 800A VGE = ±15V, LS = 150nH Tj = 125°C, Inductive load Eon
< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 PERFORMANCE CURVES SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 15 20 25 30 Gate resistor [Ohm] Switching Energies [J] VCC = 2800V, IC = 800A VGE = ±15V, LS = 150nH Tj = 125°C, Inductive load Eoff FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 100 100 1000 10000 Emitter Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr Irr VCC = 2800V, VGE = ±15V RG(on) = 4.0Ω, LS = 150nH Tj = 125°C, Inductive load HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL)HALF-BRIDGE 0.01 0.1 100 100 1000 10000 Collector Current [A] Switching Times [µs] VCC = 2800V, VGE = ±15V RG( on) = 4.0Ω, RG(off) = 15Ω LS = 150nH, Tj = 125°C Inductive load tr td(on) td(off) tf REVERSE BIAS SAFE OPERATING AREA (RBSOA) 500 1000 1500 2000 2500 0 1000 2000 3000 4000 5000 Collector-Emitter Voltage [V] Collector Current [A] VCC 3200V, VGE = ±15V Tj = 125°C, RG(off) = 15Ω
< HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 0 1000 2000 3000 4000 5000 Collector-Emitter Voltage [V] Collector Current [kA] VCC 3200V, VGE = ±15V Tj = 125°C, RG(on) = 4.0Ω, RG(off) = 15Ω TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rth(j-c)Q = 15.0K/kW Rth(j-c)D = 28.5K/kW FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 500 1000 1500 2000 2500 0 1000 2000 3000 4000 5000 Emitter-Collector Voltage [V] Reverse Recovery Current [A] VCC 3200V, di/dt < 4kA/µs Tj = 125°C exp 1R Z i tn 1 i i) c j ( th) t ( 1234 Ri [K/kW] : 0.0096 0.1893 0.4044 0.3967 ti [sec] : 0.0001 0.0058 0.0602 0.3512
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