CM800HA-34H MITSUBISHI | Alldatasheet

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Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. CM800HA-34H HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules C G E C C E E C E C ECM E C G 114 130 16.5 2.5 18.5 61.5 14.5 140 31.5 4 - M8 NUTS 3 - M4 NUTS 124±0.25 57±0.25 57±0.25 6 - φ 7 MOUNTING HOLES LABEL CIRCUIT DIAGRAM

Mar. 2003 VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 850V, IC = 800A, VGE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V R G = 2.5Ω Resistive load switching operation I E = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MAXIMUM RATINGS (Tj = 25°C) Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass V GE = 0V VCE = 0V DC, TC = 95°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Collector current Emitter current 1700 ±20 800 1600 800 1600 9200 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Symbol Item Conditions Unit Ratings V V A A A A W V N·m N·m N·m kg V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso V V Min Typ Max 0.5 3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.0135 0.042 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W 2.75 3.30 13.3 5.1 4.4 2.40 135 0.012 I CES IGES C ies C oes C res Q G td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 5.54.5 Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE, VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6.5 Thermal resistance ELECTRICAL CHARACTERISTICS (Tj = 25°C) Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance I C = 80mA, VCE = 10V IC = 800A, VGE = 15V (Note 4) VCE = 10V VGE = 0V HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Mar. 2003 PERFORMANCE CURVES 1600 800 400 0 100 2 468 1200 1600 800 400 1200 20048 1 2 1 6 0 400 800 1200 1600 0 20 161284 Tj = 25°C Tj = 25°C VGE = 13V VGE = 11V VGE = 12V VGE = 10V VGE = 9V VGE = 8V VGE = 7V VGE = 14V VGE = 15V VGE = 20V IC = 1600A IC = 800A IC = 320A VCE = 10V VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 101 2310–1 571 00 23 57 1 01 23 57 1 02 103 102 100 C ies C oes C res VGE = 0V, Tj = 25°C C ies, C oes : f = 100kHz C res : f = 1MHz CAPACITANCE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE V CE (V) OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) TRANSFER CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) CAPACITANCE C ies, Coes, Cres (nF) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) EMITTER-COLLECTOR VOLTAGE V EC (V) EMITTER CURRENT I E (A) 0 1600 1200800400 Tj = 25°C Tj = 125°C MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER SWITCHING USE INSULATED TYPEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER SWITCHING USE INSULATED TYPEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 71 02 10–1 23 5 7 1 0 3 23 55 100 71 02 10–1 23 5 7 1 0 3 23 55 100 td(off) VCC = 850V, VGE = ±15V R G = 2.5Ω , Tj = 125°C Inductive load td(on) tr tf VCC = 850V, Tj = 125°C Inductive load V GE = ±15V, RG = 2.5Ω trr Irr 102 103 10–2 10–3 10–2 10–1 100 10–1 100 101 23 57 23 57 23 57 0 8000 1000060000 2000 4000 VCC = 850V IC = 800A HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) SWITCHING TIMES (µs) COLLECTOR CURRENT I C (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL ) REVERSE RECOVERY TIME t rr (µs) EMITTER CURRENT I E (A) REVERSE RECOVERY CURRENT I rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC ) 2.5 2.0 1.5 1.0 0.5 001 0 51 5 2 0 3 0 25 GATE RESISTANCE (Ω ) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) SWITCHING ENERGY (J/P) VCC = 850V, IC = 800A, VGE = ±15V, Tj = 125°C, Inductive load Eon Eoff Erec 0.2 0.4 0.6 0.8 1.0 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) CURRENT (A) SWITCHING ENERGY (J/P) 0 800 400 1200 1600 VCC = 850V, VGE = ±15V, R G = 2.5Ω , Tj = 125°C, Inductive load Eon Eoff Erec Single Pulse T C = 25°C R th(j – c)Q = 0.0135K/W R th(j – c)R = 0.042K/W