CM800DZ-34H

CM800DZ-34H MITSUBISHI | Alldatasheet

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Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 2-element in a Pack G AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM800DZ-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM G1 G2 E1 E2 E2C1 4 - M8 NUTS 6 - M4 NUTS C2C1 114 31.5 5753 4440 140 130 16 18 11.85 55.2 11.5 57±0.25 57±0.25 124±0.25 6 - φ 7 MOUNTING HOLES LABEL screwing depth min. 16.5 screwing depth min. 7.7 38+2 CIRCUIT DIAGRAM 4(E1) 3(C1) 2(C2) 1(E2)

Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Collector-emitter voltage Gate-emitter voltage Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width V GE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES ≤ 1700V, VGE = 15V Tj = 125°C Collector current Emitter current 1700 ±20 800 1600 800 1600 6200 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 Symbol Item Conditions Unit Ratings V V A A A A W V µs V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules VCE = VCES, VGE = 0V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C (Note 4) IC = 800A, VGE = 15V, Tj = 125°C (Note 4) VCC = 850V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C (Note 4) IE = 800A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 800A, VGE = ±15V RG(on) = 3.3Ω , Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 800A, VGE = ±15V RG(off) = 3.3Ω , Tj = 125°C, Ls = 150nH Inductive load V CC = 850V, IC = 800A, VGE = ±15V RG(on) = 3.3Ω , Tj = 125°C, Ls = 150nH Inductive load V V Min Typ Max 0.5 3.30 3.00 1.60 1.30 2.70 0.50 2.70 mA µA nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs µC mJ/pulse I CES IGES Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec(Note 2) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 4.5 Note 1. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed T opmax rating (125 °C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (T j) should not exceed T jmax rating (150 °C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6.5

ELECTRICAL CHARACTERISTICS

Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy I C = 80mA, VCE = 10V, Tj = 25°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C 2.60 3.10 9.0 3.6 6.6 2.30 2.00 350 260 300 120 5.5

Jul. 2005 Rth(j-c)Q Rth(j-c)R Rth(c-f) Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λ grease = 1W/m·K, 1/2 module K/kW K/kW K/kW Thermal resistance Contact thermal resistance Min Typ Max 20.0 34.0 16.0 THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit M CTI da ds LC-E(int) RC-E(int) M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part T C = 25°C N·m kg mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Min Typ Max 13.0 6.0 2.0 1.0 0.16 7.0 3.0 1.0 250 10.0 15.0 MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES 1000 1200 1400 1600 800 600 400 200 0 3 4210 56 OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) 1000 1200 1400 1600 800 600 400 200 0 6 8420 10 12 TRANSFER CHARACTERISTICS (TYPICAL ) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A)EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) 0 400 8000 1200 1600 COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) 0 400 8000 1200 1600 EMITTER CURRENT (A) Tj = 25°C VGE = 15V VGE = 10V VGE = 8V VGE = 12V VGE = 20V Tj = 25°C Tj = 125°C VCE = 10V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 15V

Jul. 2005 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 102 103 101 100 10010-1 23 5 7 101 102 CAPACITANCE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (nF) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE CHARGE (µC) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SWITCHING ENERGIES (mJ/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) GATE RESISTANCE (Ω ) SWITCHING ENERGIES (mJ/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) 0 4 620 81 0 1000 800 600 400 200 0 12008004000 1600 1200 800 1000 600 400 200 0 15 2010502 5 23 5 7 23 5 7

7 VCC = 850V, IC = 800A

Tj = 25°C Eon Eoff Erec Eoff Cies Coes Cres VCC = 850V, IC = 800A VGE = ±15V Tj = 125°C, Inductive load VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load Eon VGE = 0V, Tj = 25°C f = 100kHz Erec

Jul. 2005 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR CURRENT (A) SWITCHING TIMES (µs) REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) EMITTER CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA ) 2500 2000 1500 1000 500 0 150010005000 2000 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 23 5 7 1.2 1.0 0.8 0.6 0.4 0 10-2 10-110-3 100 101 0.2 23 5 7 23 5 7 23 5 7 100 101 10-1 10-2 103 104 102 101 101 102 100 10-1 102101 23 5 7 103 10423 5 7 23 5 7 102101 23 5 7 103 10423 5 7 23 5 7 VCC ≤ 1150V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 3.3Ω Single Pulse, TC = 25°C Rth(j–c)Q = 20K/kW Rth(j–c)R = 34K/kW VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load lrr trr td(off) td(on) tf tr