CM600HU-12H_09 MITSUBISHI | Alldatasheet

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Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE

  • Insulated Type
  • 1-element in a pack
  • UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM600HU-12H 4–φ6.5MOUNTING HOLES 2–M8NUTS2–M4NUTS E G EC G E CE CM 12.55 9.5 20.5 107 93±0.25 48±0.25 26+1 –0.5 34+1 –0.5 24.35 8.5 21.15 8.5 19.1 6.5 17.2 6.5 13.5 29 LABEL CIRCUIT DIAGRAM TC measured point

Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = ±15V RG = 1.0Ω Resistive load I E = 600A, VGE = 0V IE = 600A, die / dt = –1200A / µs Junction to case, IGBT part Junction to case, FWDi part Case to heat sink, conductive grease applied (Note 6) I C = 60mA, VCE = 10V IC = 600A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight V GE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw Auxiliary terminals M4 screw Typical value Collector current Emitter current 600 ±20 600 1200 600 1200 1560 –40 ~ +150 –40 ~ +125 2500 9.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol Item Conditions Unit Ratings V V A A A A W Vrms N·m N·m N·m g V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.0 52.8 28.8 7.8 300 600 350 300 2.6 160 0.08 0.12 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W 2.4 2.6 1200 1.44 0.02 I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC(Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Item Test Conditions VGE(th) VCE(sat) Limits Unit 64.5 Note 1. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (T C) measured point is shown in page OUTLINE DRAWING. 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. 7.5

Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 800 600 400 200 0 100 246 1000 VGE=20 (V) T j=25°C 1200 800 600 400 200 0 200 48 1 2 1000 VCE = 10V Tj = 25°C Tj = 125°C 0 120010002000 400 600 800 Tj = 25°C Tj = 125°C VGE = 15V 0 201020 468 1 2 1 41 61 8 Tj = 25°C IC = 1200A IC = 600A IC = 240A 103 0.6 1.0 1.4 102 1.8 2.2 2.6 3.0 Tj = 25°C 101 2310–1 57 100 23 5 7 101 23 5 7 102 102 100 VGE = 0V Cies Coes Cres FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V)

Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 103 101 23 5 7 102 102 23 5 7 103 td(off) VCC = 300V VGE = ±15V RG = 1.0Ω Tj = 125°C td(on) tf tr 101 103 101 23 5 7 102 102 23 5 7 103 100 102 101 –di/dt = 1200A/µs Tj = 25°C trr lrr 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.08K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.12K/W 0 4000 800 1200 1600 VCC = 200V VCC = 300V IC = 600A TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)