CM600HU-12F

CM600HU-12F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 4–φ6.5 MOUNTING HOLES 2–M8NUTS2–M4NUTS E G EC G E CE CM 12.55 9.5 20.5 107 93±0.25 48±0.25 26+1 –0.5 34+1 –0.5 24.35 8.5 21.15 8.5 19.1 6.5 17.2 6.5 13.5 29 6.5 23 6 23 LABEL CIRCUIT DIAGRAM Tc measured point RTC CM600HU-12F APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE ¡Insulated Type ¡1-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 V V W Vrms N • m N • m N • m g VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = ±15V RG = 3.1Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part FWDi part Case to heat sink, Thermal compound applied Case temperature measured point is just under the chips IC = 60mA, VCE = 10V IC = 600A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 600 1200 600 1200 1420 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE A A 2.2 160 6.0 600 400 900 250 300 2.6 0.088 0.12 0.048*3 mA µA nF nC µC V K/W Ω 1.6 1.6 3720 11.7 0.02 3.1 V ns ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value Symbol Parameter Collector current Emitter current Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES 200 400 600 800 1000 1200 000 . 511 .5 2 2.5 3 3.5 4 101 102 103 104 00 . 511 .5 2 3.5 42.5 3 100 101 102 103 10–1 2 10035 7 2 10135 7 2 10235 7 0.5 1.5 2.5 0 12000 400 800 068 1 0 12 14 16 18 20 0 10123 5 7 10223 5 7 10323 5 7 101 102 103 100 8.5 7.5 9.5 VGE=20V Tj=25°C Tj = 25°C Tj = 125°C VGE = 15V IC = 1200A IC = 600A IC = 240A Tj = 25°C Tj = 25°C VGE = 0V Cies Coes Cres td(off) td(on) tf tr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A)

Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 101 10–3 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 0 1000 2000 3000 4000 5000 10–5 10–4 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Irr trr VCC = 200V VCC = 300V IC = 600A Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) IGBT part: Per unit base = Rth(j–c) = 0.088K/W FWDi part: Per unit base = R th(j–c) = 0.12K/W REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)