CM600HG-90H MITSUBISHI | Alldatasheet
Document overview
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Technical content
- High Insulated Type
- 1-element in a Pack
- AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM600HG-90H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CIRCUIT DIAGRAM >PET+PBT< >PET+PBT< E 4 2 GC +1.0 +1.0 screwing depth min. 7.7 screwing depth min. 16.5 E (3) C (4) E (1) C (2) E G C 6-φ7 MOUNTING HOLES 4-M8 NUTS 3-M4 NUTS 5±0.15 130±0.5 57±0.2557±0.25 17±0.1 140±0.5 124±0.25 41±0.5 40.4±0.5 22±0.3 18±0.3 28.5±0.5 30.7±0.542.5±0.5 16.5±0.3 61.2±0.5 44±0.3 9±0.1 LABEL
INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item Conditions Ratings Unit VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C DC, Tc = 100°C Pulse (Note 1) DC Pulse (Note 1) T c = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, Q PD ≤ 10 pC VCC = 3200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C 4500 ± 20 600 1200 600 1200 7500 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V A A A A W V V µs
ELECTRICAL CHARACTERISTICS
Tj = 25°C Tj = 125°C 5.0 6.0 108 2.4 3.45 3.70 2.80 1.70 4.80 4.15 610 0.67 3.5 7.0 0.5 2.40 1.20 6.00 1.20 1.80 Typ Limits MaxMin Unit I CES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) V CE = VCES, VGE = 0V VCE = 10 V, IC = 60 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 2250 V, IC = 600 A, VGE = ±15 V, Tj = 25°C IC = 600 A (Note 4) VGE = 15 V VCC = 2250 V, IC = 600 A, VGE = ±15 V RG = 15 Ω, Tj = 125°C, Ls = 120 nH Inductive load VCC = 2250 V, IC = 600 A, VGE = ±15 V RG = 15 Ω, Tj = 125°C, Ls = 120 nH Inductive load IE = 600 A (Note 4) VGE = 0 V VCC = 2250 V, IE = 600 A, VGE = ±15 V RG = 15 Ω, Tj = 125°C, Ls = 120 nH Inductive load mA V µA nF nF nF µC V µs µs J/P µs µs J/P V µs µC J/P Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules THERMAL CHARACTERISTICS Symbol Item Conditions 9.0 16.5 33.0 Typ Limits MaxMin Unit R th(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Thermal resistance Contact thermal resistance Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ grease = 1W/m·K, D(c-f) = 100 µm K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions 7.0 3.0 1.0 600 1.00 0.19 15.0 6.0 3.0 Typ Limits MaxMin Unit M t Ms Mt m CTI d a ds LP CE RCC’+EE’ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw T c = 25°C N·m N·m N·m kg mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (T j) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE (V) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) 01 3 24 5 6 024681357 02 6 48 1 0 12 01 3 24 5 6 1200 1000 800 600 400 200 1200 1000 800 600 400 200 1200 1000 800 600 400 200 1200 1000 800 600 400 200 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 15V VCE = 20V Tj = 125°C VGE = 8V VGE = 20V VGE = 10V VGE = 12V VGE = 15V
INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0 60 01 0150010005000 3020 40 50 05 1 0 15 102 103 101 100 10010-1 23 5 7 101 10223 5 7 23 5 7 CAPACITANCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (nF) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE (µC) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) -15 -10 10-1 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) GATE RESISTOR (Ω) SWITCHING ENERGIES (J/P) VCC = 2250V, IC = 600A VGE = ±15V, Tj = 125°C Inductive load VCE = 2250V, IC = 600A Tj = 25°C Erec Eoff Cies Coes Cres VCC = 2250V, VGE = ±15V RG = 15Ω, Tj = 125°C Inductive load Eon VGE = 0V, Tj = 25°C f = 100kHz Erec Eoff Eon
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ZRth( j –c ) ( t ) = Σ n i=1 i 1–exp ti – t Ri [K/kW] τi [sec] 0.0059 0.0002 0.0978 0.0074 0.6571 0.0732 0.2392 0.4488 COLLECTOR CURRENT (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10-1 EMITTER CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) 103 104 102 101 101 102 100 10-1 101 102 100 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 1.0 0.8 0.6 0.4 0.2 1 102423 5 7 103423 5 7 104423 5 7 101 102423 5 7 103423 5 7 104423 5 7 td(off) td(on) tf tr VCC = 2250V, VGE = ±15V RG = 15Ω, Tj = 125°C Inductive load VCC = 2250V, VGE = ±15V RG = 15Ω, Tj = 125°C Inductive load lrr trr Rth(j–c)Q = 16.5K/kW Rth(j–c)R = 33.0K/kW
INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 1000 20000 3000 50004000 COLLECTOR-EMITTER VOLTAGE (V) REVERSE RECOVERY CURRENT (A) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 1000 2000 3000 5000 4000 1000 20000 3000 50004000 1500 1000 500 1500 1000 500 2000 4000 6000 8000 VCC ≤ 3200V, di/dt ≤ 2200A/µs Tj = 125°C VCC ≤ 3200V, VGE = ±15V Tj = 125°C, RG ≥ 15Ω VCC ≤ 3200V, VGE = ±15V Tj = 125°C, RG ≥ 15Ω