CM600HG-130H | DigiCamel IC Datasheet

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High Insulated Type
1-element in a Pack
AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM600HG-130H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CIRCUIT DIAGRAM 64 2 E GC +1.0 +1.0 screwing depth min. 7.7 screwing depth min. 16.5 E (5) C (6) E (3) C (4) E (1) C (2) E G C 8-φ7 MOUNTING HOLES 5-M8 NUTS 3-M4 NUTS 5±0.15 190±0.5 40.4±0.3 41±0.518±0.3 22±0.312±0.3 61.2±0.5 14±0.3 59.2±0.5 61.2±0.5 17±0.1 140±0.5 124±0.25 44±0.3 9±0.1 LABEL

INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item Conditions Tj = –40°C Tj = +25°C Tj = +125°C Ratings Unit VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VGE = 0V VCE = 0V, Tj = 25°C DC, Tc = 80°C Pulse (Note 1) DC Pulse (Note 1) T c = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, Q PD ≤ 10 pC VCC = 4500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C 5800 6300 6500 ± 20 600 1200 600 1200 8900 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V A A A A W V V µs

ELECTRICAL CHARACTERISTICS

Tj = 25°C Tj = 125°C 5.0 –0.5 6.0 124 7.6 2.2 9.9 4.50 4.60 1.20 0.35 4.50 8.20 0.50 3.10 4.30 4.00 3.60 1.00 2.40 1100 2.00 7.0 0.5 Typ Limits MaxMin Unit I CES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf tf2 Eoff(10%) VEC trr trr2 Qrr Erec(10%) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) V CE = VCES, VGE = 0V VCE = 10 V, IC = 60 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 3600 V, IC = 600 A, VGE = ±15 V, Tj = 25°C IC = 600 A (Note 4) VGE = 15 V VCC = 3600 V, IC = 600 A, VGE = ±15 V RG(on) = 10 Ω, Tj = 125°C, Ls = 150 nH t(IGBT_off) = 60 µs(Note 6), Inductive load VCC = 3600 V, IC = 600 A, VGE = ±15 V RG(off) = 33 Ω, Tj = 125°C, Ls = 150 nH Inductive load IE = 600 A (Note 4) VGE = 0 V VCC = 3600 V, IE = 600 A, VGE = ±15 V RG(on) = 10 Ω, Tj = 125°C, Ls = 150 nH t(IGBT_off) = 60 µs(Note 6), Inductive load mA V µA nF nF nF µC V µs µs J/P µs µs µs J/P V µs µs µC J/P Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C

INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules THERMAL CHARACTERISTICS Symbol Item Conditions 6.0 14.0 22.0 Typ Limits MaxMin Unit R th(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Thermal resistance Contact thermal resistance Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ grease = 1W/m·K, D(c-f) = 100 µm K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions 7.0 3.0 1.0 600 1.35 0.14 15.0 6.0 3.0 Typ Limits MaxMin Unit M t Ms Mt m CTI d a ds LP CE RCC’+EE’ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw T c = 25°C N·m N·m N·m kg mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (T j) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. t(IGBT_off) definition is shown as follows. Ic t(IGBT_off) time

Fig. 1 – Definitions of switching times & energies of IGBT part Fig. 2 – Definitions of reverse recovery charge & energy of FWDi part HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 90%IC 10%VGE 90%VGE 90%IC 50%IC 10%IC dt di 10%IC 10%VCE 10%VCEVCE Eon = ic·vce dt IC VCC VGE td(on) td(off) tf2tr ton t1 t2 t3 t4 Eoff = ic·vce dt tf = (0.9ic–0.1ic)/(di/dt) toff = td(off)+tf t3∫ di/dt trr dt 10%VEC VEC(VR) 10%IEdi Irr trr2 t5 t60 Qrr = – ie dt Erec = – ie·vec dt IE(IF)

INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE (V) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) 1000 1200 800 600 400 200 00246 1000 1200 800 600 400 200 1000 1200 800 600 400 200 002468 1000 1200 800 600 400 200 0 6 8420 10 12 0246 8 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 15V VCE = 20V Tj = 125°C VGE = 8V VGE = 20V VGE = 10V VGE = 12V VGE = 15V

INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 00 500 1000 1500 002 0 4 0 6 0 102 103 101 100 10010-1 23 5 7 101 10223 5 7 23 5 7 CAPACITANCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (nF) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE (µC) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) -15 -10 151050 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) GATE RESISTOR (Ω) SWITCHING ENERGIES (J/P) VCC = 3600V, IC = 600A VGE = ±15V, Tj = 125°C Inductive load 10-1 VCE = 3600V, IC = 600A Tj = 25°C Erec Eoff Cies Coes Cres VCC = 3600V, VGE = ±15V RG(on) = 10Ω, RG(off) = 33Ω Tj = 125°C, Inductive load Eon VGE = 0V, Tj = 25°C f = 100kHz Erec Eoff Eon

INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ZRth( j –c ) ( t ) = Σ n i=1 i 1–exp ti – t    Ri [K/kW] τi [sec] 0.0059 0.0002 0.0978 0.0074 0.6571 0.0732 0.2392 0.4488 COLLECTOR CURRENT (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10-1 101 102423 5 7 103423 5 7 104423 5 7 EMITTER CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) 103 104 102 101 101 102 100 10-1 101 102423 5 7 103423 5 7 104423 5 7 101 102 100 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 1.0 0.8 0.6 0.4 0.2 td(off) td(on) tf tr VCC = 3600V, VGE = ±15V RG(on) = 10Ω, RG(off) = 33Ω Tj = 125°C, Inductive load VCC = 3600V, VGE = ±15V RG(on) = 10Ω, RG(off) = 33Ω Tj = 125°C, Inductive load lrr trr Rth(j–c)Q = 14K/kW Rth(j–c)R = 22K/kW

INSULATED TYPE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1500 500 1000 15000 5000 10000 1500 500 1000 2000 40000 6000 8000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 2000 40000 6000 80002000 4000 6000 8000 COLLECTOR-EMITTER VOLTAGE (V) REVERSE RECOVERY CURRENT (A) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC ≤ 4500V, di/dt ≤ 3000A/µs Tj = 125°C VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 33Ω VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 33Ω

Product Information

CM600HG-130H specifications and overview.

Summary

HIGH POWER SWITCHING USE INSULATED TYPE

Description

HIGH POWER SWITCHING USE INSULATED TYPE

Source title CM600HG-130H Datasheet(PDF) - Mitsubishi Electric Semiconductor

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