CM600HB-90H MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Mar. 2003 MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. CM600HB-90H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM C G E CC E E C G 3 - M4 NUTS 4 - M8 NUTS C ECM E C E LABEL 57±0.2557±0.25 140 114 130 61.5 5.2 29.5 48.8 124 ±0.25 10.65 10.35 6 - φ7MOUNTING HOLES 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003 MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 2250V, IC = 600A, VGE = 15V VCC = 2250V, IC = 600A VGE1 = VGE2 = 15V R G = 15Ω Resistive load switching operation I E = 600A, VGE = 0V IE = 600A, die / dt = –1200A / µs (Note 1) Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied I C = 60mA, VCE = 10V IC = 600A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass V GE = 0V VCE = 0V DC, TC = 85°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Collector current Emitter current 4500 ±20 600 1200 600 1200 7400 –40 ~ +125 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 MAXIMUM RATINGS (Tj = 25°C) Symbol Item Conditions Unit Ratings V V A A A A W V N·m N·m N·m kg VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.90 2.40 2.40 6.00 1.20 5.20 1.80 0.0135 0.027 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W 3.00 3.30 108 8.0 2.4 5.4 4.00 240 0.010 I CES IGES C ies C oes C res Q G td (on) tr td (off) tf V EC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 6.04.5 Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE , VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 125°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003 MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE INSULATED TYPE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 800 1000 1200 400 200 0 100 2 468 600 8000 10000 12000 4000 2000 6000 20048 1 2 1 6 02 0 161284 Tj = 25°C Tj = 25°C VCE = 10V Tj = 25°C Tj = 125°C 101 2310–1 571 00 23 57 1 01 23 57 1 02 103 102 100 VGE = 15V, Tj = 25°C C ies, C oes : f = 100kHz C res : f = 1MHz CAPACITANCE CHARACTERISTICS (TYPICAL ) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) TRANSFER CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V)COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) EMITTER-COLLECTOR VOLTAGE V EC (V) EMITTER CURRENT I E (A) 00 200 400 600 800 1000 1200 Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C Ic=1200A Ic=600A Ic=240A C ies C oes C res VGE =20V VGE =15V VGE =14V VGE =12V VGE =10V VGE =8V PERFORMANCE CURVES

Mar. 2003 MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE INSULATED TYPE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 71 02 10–1 23 5 7 1 0 3 23 55 100 71 02 10–1 23 5 7 1 0 3 23 55 100 101 VCC = 2250V, VGE = ±15V R G = 15Ω , Tj = 125°C Inductive load VCC = 2250V, Tj = 25°C Inductive load IGBT drive conditions V GE = ±15V, RG = 15Ω 102 103 10–2 10–3 10–2 10–1 100 10–1 100 101 23 57 23 57 23 57 Single Pulse TC = 25°C R th(j – c)Q = 0.0135K/W R th(j – c)R = 0.027K/W 0 8000 1000060000 2000 4000 VCC = 2250V IC = 600A HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) SWITCHING TIMES (µs) COLLECTOR CURRENT I C (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL ) REVERSE RECOVERY TIME t rr (µs) EMITTER CURRENT I E (A) REVERSE RECOVERY CURRENT I rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC ) 3.0 2.5 2.0 1.5 1.0 0.5 00 5 10 15 20 30 25 GATE RESISTANCE (Ω ) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) SWITCHING ENERGY (J/P) td(off) td(on) tr trr Irr tf 4.0 3.0 2.0 1.0 5.0 0 200 400 600 1200 800 1000 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) CURRENT (A) SWITCHING ENERGY (J/P) VCC = 2250V, VGE = ±15V, R G = 15Ω , Tj = 125°C, Inductive load Eon Eoff Erec