CM600DY-12NF MITSUBISHI | Alldatasheet
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APPLICATION NOTE MITSUBISHI<IGBT MODULE> Tentative CM600DY-12NF [Apr. [M.Tabata 13-Sep.'02 | “| | Avhie 22- of. ~ 02 | HIGH POWER SWITCHING USE Notice : This is not a final specification. Some parametric limits are subject to change. ICM600DY-12NF @Voeg ttre eee ees B00V @ Insulated Type @2-lements in a pack APPLICATION General purpose inverters & Servo controls,etc ABSOLUTE MAXIMUM RATINGS (T, = 25 °C) [Symbol] item Conditions Ratings [Units] Collector-emitter_ voltage G-E Short | eo | v | CE Short Collector current A LQeeo eae eT puse 120 ftj__[dunction temperature | SSCS CBO OY fTsig [Storage temperature | SSCS~*dC 125 | Main terminal to base plateAC 1 min. | 2500 [| V__| | — [Torque strength Main terminal M6 | 35 ~ 4.5 | Nem | | — [Torque strength Mounting holes M6 | 35~45 | Nem | [Weight ~via value [50 | a | | TSM-1670-A |
APPLICATION NOTE MITSUBISHI<IGBT MODULE> CM600DY-12NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (T; = 25 °C) Collector cutoff current Voe=VeesVae= OV P= [= [1 [im |] Gate-emitter lacs | Gate leakage current Vee=Vees Vce= OV | - | - [05 | xa | Vee;eat) Collector to emitter saturation T= 25 °C I, = 600A | - | 17 [ 22 | Vv Reverse transfer capacitance | - | - | 36 | ]Q, __| Total gate charge Veo=800V,c=600AVoe=15V | — | 2400 | = | ne | td(on) | Turn-on delay time Voc=300V,lc= 600A | - | - | 500 | ltd(ot) | Turn-off delay time Re= 4.29,Inductive load | — | - | 750 | if | Turn-off fall time switching operation | -— | - | 300 | Greve reonery mw —_|=et08 P= [= [ae Vex Emitter-collector voltage I:=600A,Voe= OV | - | - [26] v | Rth(j-c)Q | Thermal resistance” IGBT part (1/2 module) | - [| - [ot] Rth(-o)R FWDi part(1/2 moduley | — | — | 0.18 | cw . Case to fin, Thermal compound Rth(j-c’)Q| Thermal resistance To measured point is just 0.046" under the chips *1: Tc measured point is shown in page OUTLINE DRAWING. *2: Typical value is measured by using Shin-etsu Silicone "G-746". *3: If you use this value , Rth(f-a) should be measured just under the chips. © leVecittr, rr & die/dt represent characteristics of the anti-parallel,emitter to collector free-wheel diode (FWDi). @ Pulse width and repetition rate should be such that the device junction temp.(T)) dose not exceed Tjmax rating. @ Junction temperature (T;) should not increase beyond 150°C. @ Pulse width and repetition rate should be such as to cause neglible temperature rise. | 'TSM-1670-A |
APPLICATION NOTE MITSUBISHI<IGBT MODULE> CM600DY-12NF HIGH POWER SWITCHING USE OUTLINE DRAWING Dimensions in mm Te measured point (Base plate) CESS = 1 ar elle tr Af (R) ml owns! |_as | as | ans | \\ sessroume nes 4817, 18 17, 18 TAB #110. t=0. 5 IRIE 4 ES ed CIRCUIT DIAGRAM Of Of eRe) 'TSM-1670-A |