CM600DU-5F MITSUBISHI | Alldatasheet

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Mar. 2002 CM600DU-5F APPLICATION AC moter controll of forklift (battery power source) MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM 3-M6 NUTS Tc measured point 4-φ6.5 MOUNTING HOLES L A B E L G1 G2E2E1 CM C1E2C2E1 (8.25) 18.25 (18.5) 62 ±0.25 110 93 ±0.25 2.521.5 61 56 1414 29 +1.0 –0.5 18718718 21 8.5 7.5 2.8 0.5 0.50.5 0.5 25 25 C2E1 E2 C1 E2 G2G1 E1

Mar. 2002 PERFORMANCE CURVES MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE 1200 800 1000 400 600 200 02 3 4 5 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C 6.256.5 5.75 5.25 5.5 VGE = 15V 1000 600 400 1200 800 200 002468 1 0 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) GATE-EMITTER VOLTAGE VGE (V) VCE = 10V Tj = 25°C Tj = 125°C 1.6 1.2 0.8 0.4 00 1000 800600 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 10V Tj = 25°C Tj = 125°C 0 206 8 12 1610024 1 4 1 8 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 1200AIC = 600A IC = 240A 101 102 103 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C 10–1 101 100 102 103 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes CresVGE = 0V 400200

Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 100V VGE = ±10V RG = 4.2Ω Tj = 25°C Inductive load 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TMIE (s) IGBT part: Per unit base = Rth(j– c) = 0.11°C/W FWDi part: Per unit base = R th(j– c) = 0.20°C/W 500 2000 450035002500 1000 1500 40003000 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 50V VCC = 100V IC = 600A 101 10257 10323 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) Conditions: V CC = 100V VGE = ±10V RG = 4.2Ω Tj = 125°C Inductive load td(off) td(on) tf tr

Mar. 2002 A A 250 ±20 600 350 1200 600 350 1200 1100 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 V V A(rms) A A(rms) A W V N • m N • m g Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight Collector current Emitter current G-E Short C-E Short TC = 25°C Pulse (Note 2) T C = 25°C Pulse (Note 2) TC = 25°C Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value VCES VGES IC IC(rms) ICM IE (Note 1) IE(rms) (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE 0.5 1.7 170 5.7 850 600 1100 500 300 0.11 0.20 0.05 mA µA nF nC µC V °C/W 1.2 1.1 2200 20.0 0.02 4.0 V V ns 3.0 5.0 ns VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 100V, IC = 600A, VGE = 10V VCC = 100V, IC = 600A VGE1 = VGE2 = 10V RG = 4.2Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied*2 (1/2 module) Tc measured point is just under the chips IC = 60mA, VCE = 10V IC = 600A, VGE = 10V VCE = 10V VGE = 0V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance*3 Gate-emitter threshold voltage Collector to emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Symbol Parameter Conditions Unit Ratings UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions Mounting torque